M A COM UF28100H Datasheet

RF MOSFET Power Transistor, iOOW, 28V
100 - 500 MHz

Features

N-Channel Enhancement Mode Device
DMOS Structure
Lower Capacitances for Broadband Operation
High Saturated Output Power
Lower Noise Figure Than Competitive Devices

UF281 OOH

Input Capacitance
Qutput Capacitance
ReverseCapacitance C
Power Gain
Drain Efficiency
Return Loss

Load Mismatch Tolerance VSWR-T - 3O:l - V,,=28.0 V, 1,,=600.0 mA, P,,~lOO.O W, F=500 MHz

* Per Side

c -

IS

C

OS

RSS
GP
%
RL

13.5 pF

90

‘24 pF

10 - dB V,,=28.0 V, 1,,=800.0 mA, P,ylOO.O W, F=500 MHz

50 - %

10 - dB V,,=28.0 V, 1,,=600.0 mA, P,elOO.O W, F=500 MHz

V,,=28.0 V, F=l .O MHz’
VD,=28.0 V, F=l.O MHz’

PF

V,,=28.0 V, F=l .O MHz‘

V,,=28.0 V, l,0=600.0 mA, P,&OO.O W, F&O0 MHz

RF MOSFET Power Transistor, IOOW, 28V

Typical Broadband Performance Curves

UF281OOH

v2.00

EFFICIENCY vs FREQUENCY

80-

401

100 200

P,,=lO W I,,=600 mA (Push-Pull Device)

. .

300

FREQUENCY (MHz)

POWER OUTPUT vs SUPPLY VOLTAGE

120

100

So

60

40

20

400

I

SW

0

14

POWER OUTPUT vs POWER INPUT

V,,=28 V I,,=600 mA (Push-Pull Device)

P,,=lO W I,,=600 mA F=500 MHz

16 20 24 28 32

SUPPLY VOLTAGE (V)

0

0 1 2 4 6 8

POWER INPUT (W)

10 12