M A COM UF2805B Datasheet
an AMP company
RF MOSFET Power Transistor, 5W, 28V
100 - 500 MHz
Features
l N-Channel Enhancement Mode Device
l DUOS Structure
l Lower Capacitances for Broadband Operation
0 Common Source Configuration
l Lower Noise Floor
l 100 MHz to 500 MHz Operation
.* 9
Absolute Maximum Ratings at 25°C
B
UF2805B
v2.00
A
E
Electrical
Characteristics at 25°C
RF MOSFET Power Transistor, 5W, 28V UF2805B
v2.00
Typical Broadband Performance Curves
7
xi=
CAPACITANCES vs VOLTAGE
F=l .O MHz
a7
5
10 15
v,, (W
20 25
30
5 10
GAIN vs FREQUENCY
V,,=28 V Po,+O W I,,=50 mA
POWER OUTPUT vs VOLTAGE
P,,=O.3 W I,,=50 mA F&O0 MHz
15 20
v,, (V)
25 30 35
EFFICIENCY vs FREQUENCY
V,,=28 V I,,=50 mA P,,=5.0 W
1
100 200
FREQUENCY (MHz)
w
0
ii :: 50 -
500
POWER OUTPUT vs POWER INPUT
7
Y
0.025 0.05
V,,=28 V I,,=50 mA
0.1 0.15
POWER INPUT(W)
loo 200
0.2 0.25
300
FREQUENCY (MHz)
0.3
400 500
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