Page 1
UF2805B
RF Power MOSFET Transistor
5W, 100-500 MHz, 28V
Features
N-channel enhancement mode device
DMOS structure
Lower capacitances for broadband operation
Common source configuration
Lower noise floor
100 MHz to 500 MHz operation
ABSOLUTE MAXIMUM RATINGS AT 25° C
Parameter Rating
Drain-Source Voltage 65
Gate-Source Voltage 20
Drain-Source Current 1.4
Power Dissipation 14.4
Junction Temperature 200
Storage Temperature -55 to +150
Thermal Resistance 12.1
TYPICAL DEVICE IMPEDANCES
F (MHz) ZIN (Ω) Z
100 15.0-j80.0 35.0+j55.0
300 8.0-j43.0 29.0+j40.0
500 4.0-j29.0 28.0+j29.0
VDD=28V, IDQ=50 mA, P
Z
is the series equivalent input impedance of the device
IN
from gate to source.
Z
is the optimum series equivalent load impedance as
LOAD
measured from drain to ground
Symbol
VDS
VGS
IDS
PD
TJ
T
STG
θJC
=100.0 W
OUT
LOAD
Units
V
V
A
W
°C
°C
°C/W
(Ω)
Package Outline
Released; RoHS Compliant
20 Jan 11
ELECTRICAL CHARACTERISTICS AT 25°C
Parameter Symbol Min Max Units Test Conditions
Drain-Source Breakdown Voltage BV
Drain-Source Leakage Current I
Gate-Source Leakage Current I
Gate Threshold Voltage V
Forward Transconductance GM 80 - S VDS = 10.0 V , IDS 1.0 mA , ∆ VGS = 1.0V, 80 μs Pulse
Input Capacitance C
Output Capacitance
Reverse Capacitance C
Power Gain GP 10 - dB V
Drain Efficiency ŋD 50 - % V
Load Mismatch Tolerance VSWR-T - 20:1 - V
1
ADVANC ED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
65 - V VGS = 0.0 V , IDS = 2.0 mA
DSS
- 1.0 mA VGS = 28.0 V , VGS = 0.0 V
DSS
- 1.0 µA VGS = 20.0 V , VDS = 0.0 V
GSS
2.0 6.0 V VDS = 10.0 V , IDS = 10.0 mA
GS(TH)
- 7.0 pF VDS = 28.0 V , F = 1.0 MHz
ISS
C
OSS
RSS
- 5 pF VDS = 28.0 V , F = 1.0 MHz
- 2.4 pF VDS = 28.0 V , F = 1.0 MHz
= 28.0 V, IDQ = 50 mA, P
DD
= 28.0 V, IDQ = 50 mA, P
DD
= 28.0 V, IDQ = 50 mA, P
DD
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
= 5.0 W F =500 MHz
OUT
= 5.0 W F =500 MHz
OUT
= 5.0 W F =500MHz
OUT
Page 2
UF2805B
RF Power MOSFET Transistor
5W, 100-500 MHz, 28V
CAPACITANCES VS VOLTAGE
7
6
5
4
3
2
CAPACTANCES (pF)
1
0
5 15 25
30
10
V
DD
F=1.0MHz
C
RSS
GAIN
=28 V P
VDS(V)
FREQUENCY
VS
=5.0 W I
OUT
C
20
DQ
Typical Broadband Performance Curves
POWER OUTPUT VS VOLTAGE
C
ISS
OSS
POPWER OUTPUT (W)
30
=50 mA
60
PIN=0.4 W IDQ=5.0 mA P
8
7
6
5
4
3
2
1
0
5
10 25
EFFICIENCY
VDD=28V I
Released; RoHS Compliant
20 Jan 11
=500 W
OUT
15
20 30 35
VDS(V)
FREQUENCY
VS
=50 mA P
DQ
=5.0 W
OUT
20
GAIN (dB)
10
0
100
200 400
FREQUENCY (MHz)
300 500
POWER OUTPUT
7
100MHz
6
5
4
3
2
1
POWER OUTPUT (W)
0
0.05 0.25 2 0.15 0.025 0.3
V
DD
0.1
POWER INPUT (W)
VS
=28 V I
300MHz
55
50
EFFICIENCY (W)
45
POWER INPUT
=50 mA
DQ
0.2
500MHz
200 400
FREQUENCY (MHz)
300 100
500
2
ADVANC ED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
Page 3
UF2805B
RF Power MOSFET Transistor
5W, 100-500 MHz, 28V
TEST FIXTURE SCHEMATIC
Released; RoHS Compliant
20 Jan 11
TEST FIXTURE ASSEMBLY
3
ADVANC ED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
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