M A COM SW65-0313TR, SW65-0313-TB, SW65-0313 Datasheet

GaAs SP2T Absorptive Switch with

V 8.00

ASIC Driver, DC - 3.0 GHz

SW65-0313

Features

n Typical Isolation: 30 dB (2,000 MHz)
n Typical Insertion Loss: .75 dB (2,000 MHz)
n ASIC TTL/CMOS Driver
n Plastic, 50 mil Pitch, SOIC-16
n Low DC Power Consumption
n 50 Ohm Nominal Impedance
n Tape and Reel Packaging Available
n Test Boards Available

Description

M/A-COM's SW65-0313 is a GaAs MMIC absorptive
SP2T switch with an integral silicon ASIC driver. This
device is in a 16-lead plastic package. This switch offers
excellent broadband performance and repeatability from DC
to 3 GHz, while maintaining low DC power dissipation.
The SW65-0313 is ideally suited for wireless infrastructure
applications. Also available in a ceramic package with
improved performance.

Electrical Specifications: TA = 25°C

SO-16

Package outline conforms to JEDEC standard MS-012AC.

Parameter Test Conditions Units Min Typical Max

Insertion Loss DC - 1.0 GHz

Isolation

(All arms off)

VSWR DC - 1.0 GHz

T

T

rise

Ton T

Transients

1 dB Compression .05 GHz

Input IP3 Two tone inputs 0.05 GHz

Logic “0” Iin = 20 µA max V 0.0 — 0.8
Logic “1” Iin = 20 µA max V 2.0 — 5.0

fall
off

VCC — V +4.5 +5.0 5.5
VEE — V -8.0 -5.0 -4.75

ICC VCC = +5.0V mA — 0.2 6

IEE VEE = -5.0V mA — -0.2 -1

DC - 2.0 GHz
DC - 3.0 GHz

DC - 1.0 GHz
DC - 2.0 GHz
DC - 3.0 GHz

DC - 2.0 GHz
DC - 3.0 GHz

10%/90%, 90%/10%

50% TTL to 90%/10% RF

In-band (peak to peak)

.5 - 3.0 GHz

Up to +5 dBm 0.5 - 3.0 GHz

1

dB
dB
dB

dB
dB
dB

—
—
—

nS
nS

mV

dBm
dBm

dBm
dBm

—
—
—

35
27
21

—
—
—

—
—
—

—
—

—
—

0.6

0.75

1.2
38

30
24

1.2:1

1.3:1

1.7:1
15

50
50

+25
+30

+40
+46

0.75

0.90

1.45
—

—
—

1.3:1

1.4:1

1.9:1
50

150
150

—
—

—
—

1. Decoupling capacitors (.01 µF) are required on the power supply lines.

GaAs SP2T Absorptive Switch with ASIC Driver, DC - 3.0 GHz

SW65-0313

V 8.00

Pin Configuration

Pin # Function Pin # Function

1 V
2 N/C 10 GND
3 GND 11 RF1
4 N/C 12 GND
5 GND 13 N/C
6 RF2 14 GND
7 GND 15 V
8 GND 16 C1

2. N/C = No Connection

EE

Absolute Maximum Ratings

Parameter Absolute Maximum

Max. Input Power

0.05 GHz

0.5 - 3.0 GHz
Bias Voltages

VEE
VCC
Control Voltage 5

Operating Temperature -40°C to +85°C

Storage Temperature -65°C to +125°C

2

9 RFC

3,4

+27 dBm
+34 dBm

-8.5V

+5.5V

-0.5V to VCC +0.5V

Recommended PCB Layout

CC

Truth Table

C1 RF1 RF2

0 On Off

3. Operation of this device above any one of these
parameters may cause permanent damage.

4. When the RF input is applied to the terminated port, the
absolute maximum power is +30 dBm.

5. Standard CMOS TTL interface, latch-up will occur if logic
signal is applied prior to power supply.

Specifications subject to change without notice.

n North America: Tel. [phone]
n Asia/Pacific: Tel.[phone], Fax [phone]
n Europe: Tel. [phone], Fax[phone]

Visit www.macom.com for additional data sheets and product information.

1 Off On

2