M A COM SW-489SMB, SW-489, SW-489TR Datasheet

GaAs SP3T 2.5V High Power Switch

Feb 12 2002

DC - 2.5 GHz

Preliminary

SW-489

Features

• Low Voltage Operation 2.5V

• Low Harmonics > 65 dBc at +34 dBm & 1 GHz

• Low Insertion Loss 0.5 dB at 1 GHz

• High Isolation 18.5 dB at 2 GHz

• Miniature FQFP 12-lead 3x3mm Package

• 0.5 micron GaAs pHEMT Process

Description

M/A-COM’s SW-489 is a GaAs PHEMT MMIC single
pole three throw (SP3T) high power switch in a low cost
miniature FQFP 12-lead 3x3mm thin profile package.
The SW-489 is ideally suited for applications where high
power, low control voltage, low insertion loss, high isola­tion, small size and low cost are required. Typical appli­cations are for GSM and DCS handset systems that con­nect separate transmit and receive functions to a com­mon antenna, as well as other handset and related appli­cations. This part can be used in all systems operating
up to 2.5 GHz requiring high power at low control volt­age.

The SW-489 is fabricated using a 0.5 micron gate length
GaAs PHEMT process. The process features full pas­sivation for performance and reliability.

Absolute Maximum Ratings 1

Parameter Absolute

Max Input Power (0.5 - 2.5 GHz,

2.5V Control)

Operating Voltage +8.5 volts

Operating Temperature -40 oC to +85 oC

Storage Temperature -65 oC to +150 oC

1. Exceeding any one or combination of these limits may
cause permanent damage.

Maximum

+38 dBm

Functional Schematic

PIN 12

PIN 1

V3

RF3 RF1

100 pF

GND

GND

GND

100 pF

ANTRF2

100 pF

GND

V2

Pin Configuration

PIN
No.

1 V3 Control 3

2 RF3 RF Port 3

3 GND RF Ground

4 GND RF Ground

5 RF2 RF Port 2

6 V2 Control 2

7 GND RF Ground

8 RF1 RF Port 1

9 V1 Control 1

10 GND RF Ground

11 ANT Antenna Port

12 GND RF Ground

13 GND (paddle) RF Ground

PIN Name Description

V1

100 pF

GND

GaAs SP3T 2.5V High Power Switch

Electrical Specifications: TA = 25°C, Z0 = 50Ω 2

Parameter Test Conditions Units Min. Typ. Max.

SW-489

V 1.04

Insertion Loss DC – 1 GHz

Isolation DC – 1 GHz

Return Loss DC – 2.5 GHz dB 20

P1dB Vc = 0V/2.5V dBm 38

2nd Harmonic 1 GHz, PIN = +34 dBm, Vc = 0V/2.5V dBc 65

3rd Harmonic 1 GHz, PIN = +34 dBm, Vc = 0V/2.5V dBc 65

Trise, Tfall 10% to 90% RF, 90% to 10% RF µS 1

Cross Modulation
ANT - CELL

ANT - PCS

Cross Modulation
ANT - CELL

ANT - PCS

Ton, Toff 50% control to 90% RF, and 50% control to 10% RF µS 1

3

3

Two Tone +22 dBm, 1 MHz Spacing, 820 MHz,

Two Tone +19 dBm, 1 MHz Spacing, 1950 MHz,

Two Tones +22 dBm @ 820 & 821 MHz,

One Tone –27 dBm @ 865 MHz

Two Tones +17 dBm @ 1950 & 1951 MHz,

One Tone –27 dBm @ 1870 MHz

1 – 2 GHz

2 - 2.5 GHz

1 – 2 GHz

2 - 2.5 GHz

dB
dB
dB

dB
dB
dB

dBm

dBm

dBm

dBm

0.5

23
18
15

0.6

0.8

25

18.5
16

59

57

-108

TBD

0.65

0.8

1.0

Transients In Band mV 10

Gate Leakage |Vc| = 2.5V uA 100

2. Insertion Loss can be optimized by varying the DC Blocking Capacitor value, ie. 1000 pF for 100 MHz - 500 MHz, 100 pF for

0.5 GHz - 2.5 GHz.

3. IP3 slope versus input power is approximately 1.5:1.

Truth Table 4

V1 V2

+2.5 to +5V 0 + 0.2V 0 + 0.2V On Off Off

0 + 0.2V +2.5 to +5V 0 + 0.2V Off On Off

0 + 0.2V 0 + 0.2V +2.5 to +5V Off Off On

4. External DC blocking capacitors are required on all RF ports

Specifications subject to change without notice.

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North America: Tel. [phone], Fax [phone]

 Asia/Pacific: Tel.[phone], Fax [phone]
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Europe: Tel. [phone], Fax[phone]

Visit www.macom.com for additional data sheets and product information.

V3 ANT– RF1 ANT - RF2 ANT - RF3

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