M A COM SW-475TR-3000, SW-475TR, SW-475SMB, SW-475 Datasheet

SPDT High Isolation Terminated Switch

0.5 - 3.0 GHz

SW-475

Features

n Positive Voltage Control (0 / +5 V)
n High Isolation (53 dB typ. @ 0.9 GHz,

50 dB typ @ 1.9 GHz)

n 50-Ohm Internal Terminations
n Low Insertion Loss (0.6 dB typ. @ 0.9 GHz,

0.7 dB typ. @ 1.9 GHz)

n 4 mm FQFP-N 16-Lead Package

Description

The M/A-COM SW -475 GaAs monolithic switch provides
high isolation in a low-cost, plastic surface mount package.
The SW-475 is ideal for applications across a broad range
of frequencies including synthesizer switching, transmit /
receive switching, switch matrices and filter banks in
systems such as radio and cellular equipment, PCS, GPS,
and fiber optic modules.

M/A-COM fabricates the SW-475 using an 0.5-micron gate
length MESFET process. The process features full chip
passivation for performance and reliability.

Handling Procedures

The following precautions should be observed to avoid
damage:

Static Sensitivity

Gallium arsenide integrated circuits are ESD sensitive and
can be damaged by static electricity. Use proper ESD
precautions when handling these devices.

Truth Table

Functional Schematic

13141516

RF2 RF1

1

2

3

4

V1

V2

5 6 7 8

RFC

12

11

10

9

PIN Configuration

Pin Function Description Pin Function Description

17

— — —

(pad)

1 RF2 RF port 16 GND RF ground
2 GND RF ground 15 GND RF ground
3 GND RF ground 14 GND RF ground
4 V1 Control 1 13 GND RF ground
5 V2 Control 2 12 RF1 RF port
6 GND RF ground 11 GND RF ground
7 RFC RF port 10 GND RF ground
8 GND RF ground 9 GND RF ground

GND RF ground

Mode

(Control)

Positive1 0 1 ON OFF
Negative2 1 0 OFF ON

1. External DC blocking capacitors required on all RF ports.
We recommend 47 pF.

2. 3.0 V < VC < 8.0 V.

V1 V2 RFC -

RF1

RFC -

RF2

Logic Level Voltage Level

V

“0” = 0 ± 0.2 V

LO

V

1” = VC ± 0.2 V

HIGH

SPDT High Isolation, Terminated Switch, 0.5 - 3.0 GHz

SW-475

V 1.00

Electrical Specifications: T

Parameter Test Conditions Units Min. Typ. Max.

Insertion Loss 0.5- 1 GHz dB 0.6 0.7

1.0 - 2.0 GHz dB 0.7 0.8

2.0 - 3.0 GHz dB 0.75 0.9
Isolation 0.5 - 1 GHz dB 51 54

1.0 - 2.0 GHz dB 48 52

2.0 - 3.0 GHz dB 45 50
Return Loss 0.5 - 1 GHz dB 15 20

1.0 - 2.0 GHz dB 15 20

2.0 - 3.0 GHz dB 15 20
Input IP2 2-Tone 900 MHz, 5 MHz spacing (VC = 5.0 V) dBm 83
Input IP3 2-Tone 900 MHz, 5 MHz spacing (VC = 5.0 V) dBm 43

TRISE, TFALL 10% to 90% RF & 90% to 10% RF nS 24
TON, TOFF 50% of VC to 10 % / 90% RF nS 15
Transients VC = 5.0 V square wave, in -band mV 12

1. DC blocking capacitors requires on all RF ports.

= 25 °C, V

A

= 0, 5.0 V (unless otherwise specified)

CTL

Absolute Maximum Ratings1

Parameter Absolute Maximum

Max Input Power (0.5 - 3.0 GHz)

3 V Control

5 V Control +33 dBm
Operating Voltage +8.5 volts
Operating Temperature
Storage Temperature

1. Exceeding any one or combination of these limits may cause
permanent damage.

+30 dBm

-40 °C to +85 °C

-65 °C to +150 °C

Specifications subject to change without notice.

n North America: Tel. [phone], Fax [phone]
n Asia/Pacific: Tel.[phone], Fax [phone]
n Europe: Tel. [phone], Fax[phone]

Visit www.macom.com for additional data sheets and product information.

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