M A COM SW-442TR, SW-442SMB, SW-442RTR, SW-442 Datasheet

GaAs SPDT Terminated Switch, DC - 3.0 GHz SW-442
P
SW-442
GaAs SPDT Terminated Switch DC - 3.0 GHz
Features
Low Cost Plastic SOT-26 Package
Low Insertion Loss <0.6 dB @ 900 MHz
High Isolation >38 dB @ 900 MHz
Low Power Consumption <10µA @ +3V
Positive or Negative 2.5 to 8 V Control
Description
M/A-COM’s SW-442 is a GaAs monolithic switch in a low cost SOT-26 surface mount plastic package. The SW-442 is ideally suited for applications where very low power consumption, low insertion loss, very small size and low cost are required. Typical application is in dual band systems where switching between small signal components is required such as filter banks, single band LNA's, converters etc. The SW-442 can be used in applica­tions up to 0.25 Watts in systems such as CDMA, W-CDMA, PCS, DCS1800, GSM and other analog/digital wireless commu­nications systems.
The SW-442 is fabricated using a mature 0.8 micron GaAs MESFET process. The process features full passivation for increased performance and reliability.
Electrical Specifications TA = 25°C
SOT-26 Plastic Package
XX#Y
IN 1
Ordering Information
Part Number Package
SW-442 PIN SOT-26 Plastic Package SW-442TR Forward Tape and Reel SW-442RTR Reverse Tape and Reel SW-442SMB Sample Board
1. Reference Application Note M513 for reel size information.
1
1
Parameter Test Conditions Units Min. Typ. Max.
Insertion Loss DC - 1 GHz dB 0.5 0.7
1- 2 GHz dB 0.8 1.0 2 - 3 GHz dB 1.1 1.25
Isolation DC - 1 GHz dB 36 38
1 - 2 GHz dB 25 28 2 - 3 GHz dB 21 22
VSWR DC - 2 GHz 1.4:1 1.5:1
2 - 3 GHz 1.6:1 1.7:1
(2.7V supply) 500 MHz - 3 GHz dBm 24
P
1dB
P
(5V supply) 500 MHz - 3 GHz dBm 28
1dB
(2.7V supply) 2-Tone 900 MHz, 5 MHz spacing, 10 dBm each tone dBm 80
IP
2
IP
(2.7V supply) 2-Tone 900 MHz, 5 MHz spacing, 10 dBm each tone dBm 50
3
,
T
T
rise
fall
,
T
T
on
off
ransients
T
Gate Leakage V
M/A-COM Division of AMP Incorporated 3 North America: Tel. (800) 366-2266, Fax (800) 618-8883 3 Asia/Pacific: Tel.+81 44 844 8296, Fax +81 44 844 8298
3
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
10% to 90% RF, 90% to 10% RF 50% Control to 90% RF, Control to 10% RF In-Band
= 2.5V µA 6 15
CTL
AMP and Connecting at a Higher Level are trademarks.
ns ns
mV
40 60 10
V2.00
GaAs SPDT Terminated Switch, DC - 3.0 GHz SW-442
P
C
C
C
C
C
Absolute Maximum Ratings
1
Parameter Absolute Maximum
Input Power (0.5 - 3.0 GHz)
3V Control 5V Control
Operating Voltage Operating Temperature Storage Temperature
1. Exceeding any one or combination of these limits may cause permanent damage.
+30 dBm +33 dBm
+8.5 Volts
-40°C to +85°C
-65°C to +150°C
Truth Table
Mode
(Control)
Positive
Negative
1
2
1. External DC blocking capacitors are required on all RF ports and GND. GND capacitors can be used with postive control voltage to resonate lead inductance for improved isolation.
2. If negative control is used, DC blocking capacitors and GND capacitors are not required.
V1 V2 RFC - RF1 RFC - RF2
0±0.2V
+2.5 to +8V
0±0.2V
-2.5V to -8V
+2.5 to +8V
0±0.2V
-2.5V to -8V 0±0.2V
On Off Off On
Off On On Off
Functional Schematic
Positive Control Voltage
=100pF
V1 RFC V2
RF1 GND RF2
IN 1
=39pF
Functional Schematic
Negative Control Voltage
V1 RFC V2
=39pF
CGND
=100pF
=39pF
PIN Configuration
PIN No. Function Description
1 RF1 RF in/out 2 GND RF Ground 3 RF2 RF in/out 4 V2 V Control 2 5 RFC RF COMMON 6 V1 V Control 1
RF1 GND RF2
PIN 1
Handling Procedures
The following precautions should be observed to avoid damage:
Static Sensitivity
Gallium Arsenide Integrated Cir cuits are ESD sen sit ive and can be damaged by static electricity. Proper ESD techniques should be used when handling these devices.
V2.00
M/A-COM Division of AMP Incorporated 3 North America: Tel. (800) 366-2266, Fax (800) 618-8883 3 Asia/Pacific: Tel.+81 44 844 8296, Fax +81 44 844 8298
3
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
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