GaAs SPDT Terminated Switch, DC - 3.0 GHz SW-442
SW-442
GaAs SPDT Terminated Switch
DC - 3.0 GHz
Features
Low Cost Plastic SOT-26 Package
•
Low Insertion Loss <0.6 dB @ 900 MHz
•
High Isolation >38 dB @ 900 MHz
•
Low Power Consumption <10µA @ +3V
•
Positive or Negative 2.5 to 8 V Control
•
Description
M/A-COM’s SW-442 is a GaAs monolithic switch in a low cost
SOT-26 surface mount plastic package. The SW-442 is ideally
suited for applications where very low power consumption, low
insertion loss, very small size and low cost are required. Typical
application is in dual band systems where switching between
small signal components is required such as filter banks, single
band LNA's, converters etc. The SW-442 can be used in applications up to 0.25 Watts in systems such as CDMA, W-CDMA,
PCS, DCS1800, GSM and other analog/digital wireless communications systems.
The SW-442 is fabricated using a mature 0.8 micron GaAs
MESFET process. The process features full passivation for
increased performance and reliability.
Electrical Specifications TA = 25°C
SOT-26 Plastic Package
XX#Y
IN 1
Ordering Information
Part Number Package
SW-442 PIN SOT-26 Plastic Package
SW-442TR Forward Tape and Reel
SW-442RTR Reverse Tape and Reel
SW-442SMB Sample Board
1. Reference Application Note M513 for reel size information.
1
1
Parameter Test Conditions Units Min. Typ. Max.
Insertion Loss DC - 1 GHz dB 0.5 0.7
1- 2 GHz dB 0.8 1.0
2 - 3 GHz dB 1.1 1.25
Isolation DC - 1 GHz dB 36 38
1 - 2 GHz dB 25 28
2 - 3 GHz dB 21 22
VSWR DC - 2 GHz 1.4:1 1.5:1
2 - 3 GHz 1.6:1 1.7:1
(2.7V supply) 500 MHz - 3 GHz dBm 24
P
1dB
P
(5V supply) 500 MHz - 3 GHz dBm 28
1dB
(2.7V supply) 2-Tone 900 MHz, 5 MHz spacing, 10 dBm each tone dBm 80
IP
2
IP
(2.7V supply) 2-Tone 900 MHz, 5 MHz spacing, 10 dBm each tone dBm 50
3
,
T
T
rise
fall
,
T
T
on
off
ransients
T
Gate Leakage V
M/A-COM Division of AMP Incorporated 3 North America: Tel. (800) 366-2266, Fax (800) 618-8883 3 Asia/Pacific: Tel.+81 44 844 8296, Fax +81 44 844 8298
3
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
10% to 90% RF, 90% to 10% RF
50% Control to 90% RF, Control to 10% RF
In-Band
= 2.5V µA 6 15
CTL
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
ns
ns
mV
40
60
10
V2.00
GaAs SPDT Terminated Switch, DC - 3.0 GHz SW-442
Absolute Maximum Ratings
1
Parameter Absolute Maximum
Input Power (0.5 - 3.0 GHz)
3V Control
5V Control
Operating Voltage
Operating Temperature
Storage Temperature
1. Exceeding any one or combination of these limits may cause
permanent damage.
+30 dBm
+33 dBm
+8.5 Volts
-40°C to +85°C
-65°C to +150°C
Truth Table
Mode
(Control)
Positive
Negative
1
2
1. External DC blocking capacitors are required on all RF ports and
GND. GND capacitors can be used with postive control voltage to
resonate lead inductance for improved isolation.
2. If negative control is used, DC blocking capacitors and GND
capacitors are not required.
V1 V2 RFC - RF1 RFC - RF2
0±0.2V
+2.5 to +8V
0±0.2V
-2.5V to -8V
+2.5 to +8V
0±0.2V
-2.5V to -8V
0±0.2V
On
Off
Off
On
Off
On
On
Off
Functional Schematic
Positive Control Voltage
=100pF
V1 RFC V2
RF1 GND RF2
IN 1
=39pF
Functional Schematic
Negative Control Voltage
V1 RFC V2
=39pF
CGND
=100pF
=39pF
PIN Configuration
PIN No. Function Description
1 RF1 RF in/out
2 GND RF Ground
3 RF2 RF in/out
4 V2 V Control 2
5 RFC RF COMMON
6 V1 V Control 1
RF1 GND RF2
PIN 1
Handling Procedures
The following precautions should be observed to avoid damage:
Static Sensitivity
Gallium Arsenide Integrated Cir cuits are ESD sen sit ive and can
be damaged by static electricity. Proper ESD techniques should
be used when handling these devices.
V2.00
M/A-COM Division of AMP Incorporated 3 North America: Tel. (800) 366-2266, Fax (800) 618-8883 3 Asia/Pacific: Tel.+81 44 844 8296, Fax +81 44 844 8298
3
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.