M A COM SW-314 Datasheet

GaAs SP4T Absorptive Switch,
DC - 3 GHz

V 4.00

SW-314

Features

n Integral TTL Driver
n Isolation: 50 dB Typ. At 1 GHz
n Ultra Low DC Power Consumption
n Hermetic Surface Mount Package
n 50 Ohms Nominal Impedance
n MIL-STD-883 Screening Available

Description

M/A-COM’s SW-314 is a GaAs MMIC SP4T absorptive
switch with an integral silicon ASIC driver. This
device is in a 24-lead ceramic surface mount package.
These switches exhibit excellent performance from DC to 3
GHz, with very low DC power dissipation. The
SW-314 is ideally suited for RF/IF communications
applications. Environmental screening is available.
Contact the factory for information.

CR-14

Electrical Specifications

1,2

(From –55°C to +85°C)

Parameter Test Conditions Frequency Units Min Typ Max

Insertion Loss — DC - 0.5 GHz

DC - 1.0 GHz
DC - 2.0 GHz
DC - 3.0 GHz

Isolation — DC - 0.5 GHz

DC - 1.0 GHz
DC - 2.0 GHz
DC - 3.0 GHz

VSWR RFC, RF1 - RF4 (On) DC - 0.5 GHz

DC - 1.0 GHz
DC - 2.0 GHz
DC - 3.0 GHz

VSWR RF1 - RF4 (Off) DC - 0.5 GHz

DC - 1.0 GHz
DC - 2.0 GHz
DC - 3.0 GHz

Trise, Tfall 10% to 90% — ns — 7 —

Ton, Toff 50% Control to 90% / 10% RF — ns — 25 —

Transients In-Band (peak-peak) — mV — 20 —

1 dB Compression Input Power 0.05 GHz

0.5 GHz to 3 GHz

dB
dB
dB
dB

dB
dB
dB
dB

Ratio
Ratio
Ratio
Ratio

Ratio
Ratio
Ratio
Ratio

dBm
dBm

—
—
—
—

50
40
35
30

—
—
—
—

—
—
—
—

—
—

—
—
—
—

—
—
—
—

—
—
—
—

—
—
—
—

+20
+27

1.3

1.4

1.6

1.8
—

—
—
—

1.6:1

1.6:1

1.6:1

1.8:1

1.3:1

1.5:1

1.9:1

2.4:1

—
—

1. All specifications apply when operated with bias voltages of +5V for Vcc and –5V for Vee.

2. When DC blocks are used, a 10K ohm return to GND is required on the RFC port.

GaAs SP4T Absorptive Switch, DC - 3 GHz

Electrical Specifications (From –55°C to +85°C)

Parameter Test Conditions Frequency Units Min Typ Max

2

IP3

IP2 Two-Tone Input Power up to +5 dBm 0.05 GHz

Vcc — — V 4.5 5.0 5.5

Vee — — V -8.0 — -5.0

Icc Vcc = 4.5 to 5.5 V

Iee Vee = -5.0V to -8.0V — mA — 0.1 1.0

Vctl
Vctl

Input Leakage

Current (Low)

Input Leakage
Current (High)

Two-Tone Input Power up to +5 dBm 0.05 GHz

Vctl = 0 to 0.8V, or Vcc –2.1V to Vcc

Logic 0 (TTL)
Logic 1 (TTL)

0 to 0.8V — µA — — 1.0

2.0 to 5.0V — µA — — 1.0

0.5 GHz to 3 GHz

0.5 GHz to 3 GHz

dBm
dBm

dBm
dBm

—
—

—
—

— mA — 0.2 4.0

—
—

V
V

0.0

2.0

SW-314

+35
+46

+45
+60

—
—

V 4.00

—
—

—
—

0.8

5.0

Absolute Maximum Ratings

Parameter

Max Input Power

0.05 GHz

0.5 - 3.0 GHz 4
Bias Voltages

Vcc
Vee

Absolute Maximum

-0.5 to +5.5V

-8.5V to +0.5V

3,4

+27 dBm
+34 dBm

Control Voltage 5 -0.5V, to Vcc +0.5V

Operating Temperature -55°C to +125°C

Storage Temperature -65°C to +150°C

3. Operation of this device above any one of these parameters
may cause permanent damage.

4. When the input power is applied to the terminated port, the
absolute maximum is +30 dBm.

5. Standard CMOS TTL interface, latch-up will occur if logic
signal is applied prior to power supply.

Functional Schematic

PIN 13 C3

C4

GND

GND

GND

RF3

GND

GND

RF4

GND

GND

PIN 24 GND

C2 PIN 12

C1

Vcc

Vee

GND

RF2

GND

GND

RF1

GND

GND

RFC PIN 1

Truth Table

TTL Control Inputs Condition of Switch

RF Common to Each RF Port

C1 C2 C3 C4 RF1 RF2 RF3 RF4

1 0 0 0 On Off Off Off
0 1 0 0 Off On Off Off
0 0 1 0 Off Off On Off
0 0 0 1 Off Off Off On

Specifications subject to change without notice.

n North America: Tel. [phone]
n Asia/Pacific: Tel.[phone], Fax [phone]
n Europe: Tel. [phone], Fax[phone]

Visit www.macom.com for additional data sheets and product information.

0 = TTL Low 1 = TTL High

2