M A COM SW-312 Datasheet

GaAs SPDT Reflective Switch, DC - 3

SW-312

GHz with TTL/CMOS Control Input

Features

n Integral TTL Driver
n Ultra Low Power Consumption
n Fast Switching Speed: 7 ns Typical
n Surface Mount Package
n 50 Ohm Nominal Impedance
n MIL-STD-883 Screening Available

Description

M/A-COM’s SW-312 is a GaAs FET SPDT reflective
switch with integral silicon ASIC driver. Packaged in a
16-lead ceramic surface mount package, this device
offers excellent performance and repeatability from DC
to 3 GHz while maintaining low power consumption.
The SW-312 is ideally suited for use where fast speed,
low power consumption and broadband applications are
required. MIL-STD-883 screening available.

CR-9

V 3.00

Electrical Specifications

1,2

(From –55°C to +85°C)

Parameter Test Conditions Frequency Units Min Typ Max

Insertion Loss — DC - 3000 MHz

DC - 2000 MHz
DC - 1000 MHz

DC - 500 MHz

VSWR — DC - 3000 MHz

DC - 2000 MHz
DC - 1000 MHz

DC - 500 MHz

Isolation — DC - 3000 MHz

DC - 2000 MHz
DC - 1000 MHz

DC - 500 MHz

Trise, Tfall 10% to 90% — ns — 7 —

Ton, Toff 1.3V CTL to 90% / 10% — ns — 18 —

Transients In-Band — mV — 25 —

1 dB Compression Input Power 0.05 GHz

0.5 GHz to 3 GHz

IP2 Two-Tone Input Power up to +5 dBm 0.05 GHz

0.5 GHz to 3 GHz

IP3 Two-Tone Input Power up to +5 dBm 0.05 GHz

0.5 GHz to 3 GHz

Vin Low 0V to 0.8V — µA — — 1

Vin High 2.0V to 5.0V — µA — — 1

dB
dB
dB
dB

Ratio
Ratio
Ratio
Ratio

dB
dB
dB
dB

dBm
dBm

dBm
dBm

dBm
dBm

—
—
—
—

—
—
—
—

30
35
40
45

—
—

—
—

—
—

—
—
—
—

—
—
—
—

—
—
—
—

+25
+30

+60
+65

+40
+46

1.2

1.1

0.9

0.8

1.5:1

1.4:1

1.4:1

1.3:1
—

—
—
—

—
—

—
—

—
—

1. All specifications apply when operated with bias voltages of +5V for Vcc and –5V for Vee.

2. When DC blocks are used, a 10K ohm return to GND is required on the RFC port.

GaAs SPDT Reflective Switch, DC - 3 GHz with TTL/CMOS Control Input

Electrical Specifications (From –55°C to +85°C)

Parameter Test Conditions Frequency Units Min Typ Max

Vcc +5.0V ± 10% — mA — — 1
Vee -5.0V to -8.0V — mA — — 1

SW-312

V 3.00

Pin Configuration

Pin No. Function Pin No. Function

1 Vee 9 RFC
2 GND 10 GND
3 GND 11 GND
4 GND 12 RF1
5 RF2 13 GND

6 GND 14 GND
7 GND 15 Vcc
8 GND 16 C1

Absolute Maximum Ratings 3

Parameter

Max Input Power

50 MHz

500 - 2000 MHz
Supply Voltages

Vcc
Vee

Control Voltage 4 -0.5V, to Vcc +0.5V

Operating Temperature -55°C to +125°C

Storage Temperature -65°C to +150°C

Absolute Maximum

+27 dBm
+34 dBm

+5.5V

-8.5V

Pin Configuration (Top View)

RFC

GND

GND

RF1

GND

GND

Vcc

C1

GND

GND

GND

RF2

GND

GND

GND Orientation Mark

Vee

Truth Table

Control

Input

LO On Off

HIGH Off On

Condition of Switch

RF Common to Each RF Port

RF1 RF2

3. Operation of this device above any one of these parameters
may cause permanent damage.

4. Standard CMOS TTL interface, latch-up will occur if logic
signal is applied prior to power supply.

Specifications subject to change without notice.

n North America: Tel. [phone]
n Asia/Pacific: Tel.[phone], Fax [phone]
n Europe: Tel. [phone], Fax[phone]

Visit www.macom.com for additional data sheets and product information.

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