M A COM SW-289TR, SW-289RTR, SW-289 Datasheet

GaAs DPDT Switch
DC - 2 GHz S W-289

V 2.00

Features

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Very Low Power Consumption: 100 µW

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Low Insertion Loss: 0.5 dB

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High Isolation: 25 dB up to 2 GHz

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Very High Intercept Point: 48 dBm IP

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Nanosecond Switching Speed

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Temperature Range: -40˚C to +85˚C

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Low Cost SOIC14 Plastic Package
Tape and Reel Packaging Available

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3

1

Description

M/A-COM’s SW-289 is a GaAs MMIC DPDT switch in a low cost
SOIC 14-lead surface mount plastic package. The SW-289 is ideally
suited for use where very low power consumption is re q u i re d .
Typical applications include transmit/receive switching, switch
matrices, digital step attenuators, and filter banks in systems such as:
radio and cellular equipment, PCM, GPS, fiber optic modules, and
other battery powered radio equipment.

The SW-289 is fabricated with a monolithic GaAs MMIC using a
m a t u re 1-micron process. The process features full chip passivation
for increased perf o rmance and re l i a b i l i t y .

S O - 1 4

Ordering Information

Part Number Package

SW-289 PIN SOIC 14-Lead Plastic Package
SW-289TR Forward Tape & Reel
SW-289RTR Reverse Tape & Reel

Electrical Specifications,TA= +25°C

Parameter Test Conditions

Insertion Loss DC – 0.1 GHz dB 0.35 0.5

Isolation DC – 0.1 GHz dB 50 56

VSWR DC – 2.0 GHz 1.3:1

Trise, Tfall 10% to 90% RF, 90% to 10% RF nS 3

Ton, Toff 50% Control to 90% RF, 50% Control to 10% RF nS 6

Transients In Band mV 15

One dB Input Power 0.05 GHz dBm 22

Compression Input Power 0.5 – 2.0 GHz dBm 27

IP

2

IP

3

1. Refer to “Tape and Reel Packaging” section, or contact factory.

2. All measurements with 0, -5 V control voltages at 1 GHz in a 50Ω system, unless otherwise specified.

Measured Relative 0.05 GHz dBm 54
to Input Power 0.5 – 2.0 GHz dBm 66
(for two-tone input power up to +5 dBm)

Measured Relative 0.05 GHz dBm 45
to Input Power 0.5 – 2.0 GHz dBm 48
(for two-tone input power up to +5 dBm)

2

DC – 0.5 GHz dB 0.35 0.5
DC – 1.0 GHz dB 0.4 0.6
DC – 2.0 GHz dB 0.6 0.8

DC – 0.1 GHz dB 40 43
DC – 1.0 GHz dB 32 35
DC – 2.0 GHz dB 20 23

Unit Min. Typ. Max

GaAs DPDT Switch S W- 2 8 9

Absolute Maximum Ratings

1

Functional Sch e m a t i c

Parameter Absolute Maximum

Max. Input Power

GND

0.05 GHz +27 dBm

0.5 – 2.0 GHz +34 dBm
Control Voltage +5 V, -8.5 V
Operating Temperature -40°C to +85°C
Storage Temperature -65°C to +150°C

1.Operation of this device above any one of these parameters may cause per­manent damage.

Typical Pe r fo r m a n c e

Pin Configuration

V 2.00

Pin No. Description

1 RF3
2 GND
3 RFI
4 GND
5 RF2
6 GND
7 A

Pin No. Description

8 B

9 GND
10 RF4
11 GND
12 RF6
13 GND
14 RF5

Truth Ta bl e

Control Input Condition of Switch

A B RF1 TO RF6 TO

RF2 RF3 RF4 RF 5

1 0 On Off On Off
0 1 Off On Off On

"0" – 0 – -0.2V @ 20 µA max.
"1" – -5V @ 40 µA Typ to -8V @ 900 µA max.

Electrical Schematic