M A COM SW-279, SW-279TR, SW-279RTR Datasheet

High Power GaAs SPDT Switch
DC - 2.5 GHz

SW-279

V2.00

M/A-COM, Inc.

North America: Tel. [phone] ■ Asia/Pacific: Tel. [phone] ■ Europe: Tel. [phone]

Fax [phone] Fax [phone] Fax [phone]

1

Specifications Subject to Change Without Notice.

Model No. Package

SW-279 PIN SOIC 8 Lead
SW-279TR Forward Tape & Reel
SW-279RTR Reverse Tape & Reel

Features

• +36 dBm Typ. 1 dB Compression Point, -8V Supply

• +65 dBm Typ. 3rd Order Intercept Point, -8V Supply

• Low Insertion Loss: 0.4 dB Typical

• Low Power Consumption: 100 µW

• Fast Switching Speed

• Low Cost SOIC8 Plastic Package

• Tape and Reel Packaging Available

1

Description

M/A-COM’s SW-279 is a GaAs MMIC SPDT switch in a low cost
SOIC 8-lead surface mount plastic package. The SW-279 is ideal­ly suited for use where very low power consumption is
required. Typical applications include transmit/receive switch­ing, switch matrices, and filter banks in systems such as: radio
and cellular equipment, PCM, GPS, fiber optic modules, and
other battery powered radio equipment.

The SW-279 is fabricated with a monolithic GaAs MMIC using a
mature 1 micron process. The process features full chip passiva­tion for increased performance and reliability.

Electrical Specifications, TA= +25°C

0°-8°

.0075-0.0098

(0.19-0.25)

.1890-.1968

(4.80-5.00)

.0099-0.0196
x 45° Chamfer
(0.25-0.50)

.2284-.2440

(5.80-6.20)

PIN 8

Orientation

mark

PIN 1

8- Lead SOP outline dimensions

Narrow body .150

(All dimensions per JEDEC No. MS-012-AA, Issue C)

Dimensions in ( ) are in mm.

.1497-.1574

(3.80-4.00)

- B -

- A -

.050(1.27) BSC.

.013-.020 TYP.

(0.33-0.51)

.0040-.0098

(0.10-0.25)

- C -

.0532-.0688

(1.35-1.75)

.016-.050

(0.40-1.27)

.010(0.25) M B M

.010(0.25) M C A M B S

Unless Otherwise Noted: .xxx = ± 0.010 (.xx = ± 0.25)

.xx = ± 0.02 (.x = ±0.5)

.004 (0.10)

SO-8

1.Refer to “Tape and Reel Packaging” Section, or contact factory.

2.All specifications apply when operated with bias voltages of 0V for Vin Low and 5 to 10V for Vin Hi, and 50 Ohm impedance at all RF ports,
unless otherwise specified. High power (greater than 1W) handling specifications apply to cold switches only. For input powers under 1W, hot
switching can be used. The high control voltage must be within +/- 0.2V of the supply voltage. The RF ports must be blocked outside of the
package from ground or any other voltage.

Parameter Test Conditions

2

Unit Min. Typ. Max

Insertion Loss DC – 2.0 GHz dB 0.6 0.8

DC – 1.0 GHz dB 0.4 0.6
DC – 0.5 GHz dB 0.35 0.5
DC – 0.1 GHz dB 0.2 0.4

Isolation DC – 2.0 GHz dB 14 16

DC – 1.0 GHz dB 28 32
DC – 0.5 GHz dB 35 38
DC – 0.1 GHz dB 35 38

VSWR DC – 2.0 GHz 1.2:1

Trise, Tfall 10% to 90% RF, 90% to 10% RF nS 30

Ton, Toff 50% Control to 90% RF, 50% Control to 10% RF nS 35

Transients In Band mV 12

One dB Input Power (5V Supply/Control) 0.9 GHz dBm 33

Compression Point Input Power (8V Supply/Control) 0.9 GHz dBm 35.8

3rd Order Measured Relative (5V Supply/Control) 0.9 GHz dBm 61

Intercept to Input Power (8V Supply/Control) 0.9 GHz dBm 65

(for two-tone input power up to +10 dBm)

Ordering Information

High Power GaAs SPDT Switch SW-279

V2.00

M/A-COM, Inc.

North America: Tel. [phone] ■ Asia/Pacific: Tel. [phone] ■ Europe: Tel. [phone]

Fax [phone] Fax [phone] Fax [phone]

2

Specifications Subject to Change Without Notice.

Pin Configuration Functional Schematic

Pin No. Description

1 GND, Thermal Contact
2 GND
3 RF Common
4 GND, Thermal Contact
5 RF1
6A
7B
8 RF2

1. Operation of this device above any one of these parameters may
cause permanent damage.

2. Thermal resistance is given for TA= 25°C. T

CASE

is the temperature of

leads 1 and 4.

Parameter Absolute Maximum

1

Max. Input Power

0.5 – 2.0 GHz
5V Control and Supply +37 dBm
8V Control and Supply +40 dBm

10V Control and Supply +42 dBm
Power Dissipation 1.0 W
Control Voltage -12V, +1V
Operating Temperature -40°C to +85°C
Storage Temperature -65°C to +150°C

Thermal Resistance

2

: θ

jc

= 87 °C/W

ISOLATION vs. FREQUENCY

FREQUENCY (GHz)

ISOLATION (dB)

60

40

20

0

0 0.5

1.0

1.5

2.0

70

50

30

10

2.5

VSWR vs. FREQUENCY

FREQUENCY (GHz)

VSWR

1.5

1.4

1.3

1.2

1.0
0

0.5

1.0 1.5

2.5

1.1

2.0

Typical Performance

ISOLATION VS FREQUENCY

VSWR VS FREQUENCY

Absolute Maximum Ratings

COMPRESSION vs. CONTROL VOLTAGE (900 MHz)

CONTROL VOLTAGE (Volts)

40
35
30
25

10

-3.0

-4.0 -5.0

-6.0 -10.0

20
15

-7.0

-8.0

-9.0

COMPRESSION (dBm)

0.1 dB Compression

1.0 dB Compression

Input 3rd Order Second

Bias Power Intermodulation IP

3

Harmonic

Voltage (dBm) Products (dBC) (dBm) (dBc)

0,-5V +27 -34 +44 -61
0,-6V +27 -49 +51 -61
0,-7V +27 -64 +59 -63
0,-8V +27 -65 +59 -63

0,-10V +27 -66 +60 -63

0,-5V +28 -30 +43 -58
0,-6V +28 -41 +48.5 -58
0,-7V +28 -52 +54 -57
0,-8V +28 -60 +58 -57

0,-10V +28 -60 +58 -57

0,-5V +29 -28 +43 -54
0,-6V +29 -34 +46 -54
0,-7V +29 -44 +51 -54
0,-8V +29 -52 +55 -54

0,-10V +29 -52 +55 -54

0,-5V +30 -26 +43 -52
0,-6V +30 -32 +46 -51
0,-7V +30 -38 +49 -51
0,-8V +30 -44 +52 -51

0,-10V +30 -44 +52 -51

Control Inputs

1

Condition of Switch

RF Common to Each RF Port

A B RF1 RF2

1 0 On Off
0 1 Off On

Truth Table

1. 0 – 0 to -0.2V @ 20 µA max.
1 – -5V @ 50 µA Typ to -10V @ 800 µA max.

COMPRESSION VS CONTROL VOLTAGE (900 MHZ)

ISERTION LOSS VS FREQUENCY

Two Tone IP3Measurements

RF2

A

B

8

7

RF1

6

5

1

2

GND

GND

Thermal

Contact

3

RFC

4

GND

Thermal

Contact

INSERTION LOSS vs. FREQUENCY

1.0

.75

0.5

LOSS (dB)

0.25

0

0 0.5 1.0

+85°C

-40°C

1.5 2.5

FREQUENCY (GHz)

+25°C

2.0