M A COM SW-277TR, SW-277RTR, SW-277 Datasheet

High Power GaAs SPDT Switch
DC - 2.5 GHz

SW-277

V3.00

M/A-COM, Inc.

North America: Tel. [phone] ■ Asia/Pacific: Tel. [phone] ■ Europe: Tel. [phone]

Fax [phone] Fax [phone] Fax [phone]

1

Specifications Subject to Change Without Notice.

Features

•

Positive Supply and Control Voltages

•

+36 dBm Typ. 1 dB Compression Point, 8V Supply

•

+65 dBm Typ. 3rd Order Intercept Point, 8V Supply

•

Low Insertion Loss: 0.4 dB Typical

•

Low Power Consumption: 100 µW

•

Fast Switching Speed

•

Tape and Reel Packaging Available

1

Description

M/A-COM’s SW-277 is a GaAs MMIC SPDT switch in a low cost
SOIC 8-lead surface mount plastic package. The SW-277 is ideally
suited for use where very low power consumption is required.
Typical applications include transmit/receive switching,
switch matrices, and filter banks in systems such as: radio and
cellular equipment, PCM, GPS, fiber optic modules, and other
battery powered radio equipment.

The SW-277 is fabricated with a monolithic GaAs MMIC using a
mature 1-micron process. The process features full chip
passivation for increased performance and reliability.

Electrical Specifications, T

A

= +25°C

0°-8°

.0075-0.0098

(0.19-0.25)

.1890-.1968

(4.80-5.00)

.0099-0.0196
x 45° Chamfer
(0.25-0.50)

.2284-.2440

(5.80-6.20)

PIN 8

Orientation

mark

PIN 1

8- Lead SOP outline dimensions

Narrow body .150

(All dimensions per JEDEC No. MS-012-AA, Issue C)

Dimensions in ( ) are in mm.

.1497-.1574

(3.80-4.00)

- B -

- A -

.050(1.27) BSC.

.013-.020 TYP.

(0.33-0.51)

.0040-.0098

(0.10-0.25)

- C -

.0532-.0688

(1.35-1.75)

.016-.050

(0.40-1.27)

.010(0.25) M B M

.010(0.25) M C A M B S

Unless Otherwise Noted: .xxx = ± 0.010 (.xx = ± 0.25)

.xx = ± 0.02 (.x = ±0.5)

.004 (0.10)

SO-8

1.Refer to “Tape and Reel Packaging” Section, or contact factory.

2.All specifications apply when operated with bias voltages of 0V for Vin Low and 5 to 10V for Vin Hi, and 50 Ohm impedance at all RF ports,
unless otherwise specified. High power (greater than 1W) handling specifications apply to cold switches only. For input powers under 1W, hot
switching can be used. The high control voltage must be within +/- 0.2V of the supply voltage. The RF ports must be blocked outside of the pack­age from ground or any other voltage.

Parameter Test Conditions

2

Unit Min. Typ. Max

Insertion Loss DC – 2.0 GHz dB 0.6 0.8

DC – 1.0 GHz dB 0.4 0.6
DC – 0.5 GHz dB 0.35 0.5
DC – 0.1 GHz dB 0.2 0.4

Isolation DC – 2.0 GHz dB 14 16

DC – 1.0 GHz dB 28 32
DC – 0.5 GHz dB 35 38
DC – 0.1 GHz dB 35 38

VSWR DC – 2.0 GHz 1.2:1

Trise, Tfall 10% to 90% RF, 90% to 10% RF nS 30

Ton, Toff 50% Control to 90% RF, 50% Control to 10% RF nS 35

Transients In Band mV 12

One dB Input Power (5V Supply/Control) 0.9 GHz dBm 33

Compression Point Input Power (8V Supply/Control) 0.9 GHz dBm 35.8

3rd Order Measured Relative (5V Supply/Control) 0.9 GHz dBm 61

Intercept to Input Power (8V Supply/Control) 0.9 GHz dBm 65

(for two-tone input power up to +10 dBm)

Model Number Package

SW-277 PIN SOIC 8-Lead Plastic Package
SW-277TR Forward Tape and Reel
SW-277RTR Reverse Tape and Reel

Ordering Information

High Power GaAs SPDT Switch SW-277

V3.00

Absolute Maximum Ratings

Pin Configuration

Pin No. Description

1 GND, Thermal Contact
2 +V Supply
3

1

RF Common
4 GND, Thermal Contact
5

1

RF1
6A
7B
8

1

RF2

Control Inputs Condition of Switch

RF Common to Each RF Port

A B RF1 RF2

10 OffOn
0 1 On Off

Truth Table

Two Tone IP

3

Measurements

1. Operation of this device above any one of these parameters may cause
permanent damage.

2. Thermal resistance is given for TA= 25°C. T

CASE

is the temperature of

leads 1 and 4.

Parameter Absolute Maximum

Max. Input Power

0.5 – 2.0 GHz
5V Control and Supply +37 dBm
8V Control and Supply +40 dBm

10V Control and Supply +42 dBm
Power Dissipation 1.0 W
Supply Voltage -1V, +12V
Control Voltage -1V, Vsupply + 0.2V
Operating Temperature -40°C to +85°C
Storage Temperature -65°C to +150°C

Thermal Resistance

2

: θ

jc

= 87 °C/W

"0" – 0 to +0.2V @ 20 µA max.
"1" – +5V @ 20 µA Typ to 10V @ 500 µA max.

Supply & Input 3rd Order Second

Control Power Intermodulation IP

3

Harmonic

Voltage (dBm) Products (dBc) (dBm) (dBc)

0,5V +27 -32 +43 -74
0,6V +27 -45 +49.5 -77
0,7V +27 -58 +56 -79
0,8V +27 -72 +63 -79

0,10V +27 -72 +63 -81

0,5V +28 -30 +43 -69
0,6V +28 -40 +48 -76
0,7V +28 -53 +54.5 -78
0,8V +28 -64 +60 -79

0,10V +28 -72 +64 -80

0,5V +29 -28 +43 -59
0,6V +29 -37 +47.5 -74
0,7V +29 -49 +53.5 -75
0,8V +29 -50 +54 -75

0,10V +29 -50 +54 -75

0,5V +30 -36 +43 -67
0,6V +30 -46 +48 -73
0,7V +30 -50 +53 -75
0,8V +30 -50 +55 -75

0,10V +30 -50 +55 -75

8

7

6

5

1

4

3

2

RFC

B

+V

GND
Thermal
Contact

RF2

A

GND

Thermal

Contact

RF1

Functional Schematic

INSERTION LOSS vs. FREQUENCY

FREQUENCY (GHz)

LOSS (dB)

2.0

1.5

1.0

0.5

0

0 0.5

1.0

1.5

2.5

+85°C

+25°C

-40°C

2.0

ISOLATION vs. FREQUENCY

FREQUENCY (GHz)

ISOLATION (dB)

80

60

40

20

0

0 0.5

1.0

1.5

2.5

70

50

30

10

2.0

VSWR vs. FREQUENCY

FREQUENCY (GHz)

VSWR

2.0

1.8

1.6

1.4

1.0
0 0.5

1.0

1.5

2.0

1.2

COMPRESSION vs. CONTROL VOLTAGE (900 MHz)

CONTROL VOLTAGE (Volts)

40

35

30

25

10

3.0

4.0 5.0

6.0

10.0

20

15

7.0

8.0

9.0

1.0 dB Compression

0.1 dB Compression

COMPRESSION (dBm)

T ypical Perf ormance

1. External DC blocking capacitors required
on all RF ports.

ISOLATION VS FREQUENCY

VSWR VS FREQUENCY

INSERTION LOSS VS FREQUENCY

COMPRESSION VS CONTROL VOLTAGE (900MHz)

M/A-COM, Inc.

North America: Tel. [phone] ■ Asia/Pacific: Tel. [phone] ■ Europe: Tel. [phone]

Fax [phone] Fax [phone] Fax [phone]

2

Specifications Subject to Change Without Notice.