M A COM SW-259TR, SW-259, SW-259RTR Datasheet

GaAs SPST Switch DC - 2.5 GHz
Features
Very Low Power Consumption: 50 µW
Low Insertion Loss: 1.0 dB
High Isolation: 35 dB up to 2 GHz
Very High Intercept Point: 46 dBm IP 3
Nanosecond Switching Speed
Temperature Range: -40˚C to + 85˚C
Tape and Reel Packaging Available 1
Description
M/A-COM’s SW-259 is a GaAs MMIC SPST terminated switch in a low cost SOIC 8-lead surface mount plastic package. The SW-259 is ideally suited for use where very low power consumption is required. Typical applications include trans­mit/receive switching, switch matrices, and filter banks in systems such as: radio and cellular equipment, PCM, GPS, fiber optic modules, and other battery powered radio equipment.
The SW-259 is fabricated with a monolithic GaAs MMIC using a mature 1-micron process. The process features full chip passivation for increased performance and reliability.
Electrical Specifications, T
Parameter Test Conditions
Insertion Loss DC – 0.1 GHz dB 0.5 0.6
Isolation DC – 0.1 GHz dB 62 65
VSWR On DC – 2.0 GHz 1.2:1
Off DC – 2.0 GHz 1.2:1
Trise, Tfall 10% to 90% RF, 90% to 10% RF nS 4 Ton, Toff 50% Control to 90% RF, 50% Control to 10% RF nS 8 Transients In Band mV 35
One dB Input Power 0.05 GHz dBm 18 Compression Point Input Power 0.5 – 2.0 GHz dBm 23
2nd Order Measured Relative 0.05 GHz dBm 55 Intercept to Input Power 0.5 – 2.0 GHz dBm 68
(for two-tone input power up to +5 dBm)
3rd Order Measured Relative 0.05 GHz dBm 40 Intercept to Input Power 0.5 – 2.0 GHz dBm 46
(for two-tone input power up to +5 dBm)
1. Refer to "Tape and Reel Packaging" Section, or contact factory.
2. All measurements with 0, -5 control voltages at 1 GHz in a 50system, unless otherwise specified.
= +25°C
A
2
DC – 0.5 GHz dB 0.8 1.0 DC – 1.0 GHz dB 1.0 1.2 DC – 2.0 GHz dB 1.4 1.6
DC – 0.5 GHz dB 55 58 DC – 1.0 GHz dB 45 48 DC – 2.0 GHz dB 32 35
SO-8
PIN 8
.1497-.1574
(3.80-4.00)
Orientation
mark
PIN 1
.004 (0.10)
.050(1.27) BSC.
.1890-.1968
(4.80-5.00)
- A -
8- Lead SOP outline dimensions
(All dimensions per JEDEC No. MS-012-AA, Issue C)
Unless Otherwise Noted: .xxx = ± 0.010 (.xx = ± 0.25)
- B -
.0532-.0688
(1.35-1.75)
0°-8°
- C -
.0040-.0098
(0.10-0.25)
.013-.020 TYP.
(0.33-0.51)
.010(0.25) M C A M B S
Narrow body .150
Dimensions in ( ) are in mm.
.xx = ± 0.02 (.x = ±0.5)
Ordering Information
Model No. Package
SW-259 PIN SOIC 8-Lead Plastic SW-259TR Forward Tape & Reel SW-259RTR Reverse Tape & Reel
Unit Min. Typ. Max
SW-259
.2284-.2440
(5.80-6.20)
.010(0.25) M B M
.0099-0.0196 x 45° Chamfer (0.25-0.50)
.016-.050
(0.40-1.27)
.0075-0.0098
(0.19-0.25)
V3.00
M/A-COM, Inc.
North America: Tel. (800) 366-2266 Asia/Pacific: Tel. +81 3 3263 8761 Europe: Tel. +44 (1344) 869 595
Fax (800) 618-8883 Fax +81 3 3263 8769 Fax +44 (1344) 300 020
1
GaAs SPST Switch SW-259
V3.00
Absolute Maximum Ratings
Parameter Absolute Maximum
1
1,2
Max. Input Power
0.05 GHz +27 dBm
0.5 – 2 GHz +34 dBm Control Voltage +5V, -8.5V Storage Temperature -65°C to 150°C
1. Operation of this device above any one of these parameters may cause permanent damage
2. When the RF Input power is applied to a terminated port, the absolute maximum is +32 dBm.
Typical Performance
INSERTION LOSS vs FREQUENCY
2.0
1.5
1.0
LOSS (dB)
0.5
0
0 0.5 1.0 1.5 2.0 2.5
+25°C
FREQUENCY (GHz)
+85°C
+40°C
Functional Schematic
GND
RF1
8
7
1
2
A
GND
Pin Configuration
Pin No. Description
1 GND 2 A 3 B 4 GND 5 RF2 6 GND 7 GND 8 RF1
GND
6
3
B
RF2
5
4
GND
ISOLATION vs FREQUENCY
90 80 70 60 50 40 30
ISOLATION (dB)
20 10
0 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
VSWR vs FREQUENCY
2.0
1.8
1.6
1.4
LOSS (dB)
1.2
1.0 0 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Truth Table
Control Inputs Condition of Switch A B RF STATE 1 0 On 0 1 Off
"0" – 0 – -0.2V @ 20 µA max. "1" – -5V @ 20µA Typ to -8V @ 600 µA max.
Electrical Schematic
RF1
Q1
Q2
Q3
A
B
RF2
Q4
2
M/A-COM, Inc.
North America: Tel. (800) 366-2266 Asia/Pacific: Tel. +81 3 3263 8761 Europe: Tel. +44 (1344) 869 595
Fax (800) 618-8883 Fax +81 3 3263 8769 Fax +44 (1344) 300 020
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