GaAs SP4T Absorptive Switch,
DC - 3 GHz
V 3.00
SW15-0314
Features
n Integral TTL Driver
n Isolation: 50 dB Typ. At 1 GHz
n Low DC Power Consumption
n Surface Mount Package
n Low Cost/High Performance
n 50 Ohm Nominal Impedance
Description
M/A-COM’s SW15-0314 is a GaAs MMIC SP4T absorptive switch with an integral silicon ASIC driver. This
device is in a 24-lead ceramic surface mount package.
These switches exhibit excellent performance from DC to 3
GHz, with very low DC power dissipation. The
SW15-0314 is ideally suited for wireless infrastructure
applications. Available with enhanced performance as fully
hermetic version. Environmentally screenable as SW-314.
CR-14
Electrical Specifications
Parameter Test Conditions Frequency Units Min Typ Max
Insertion Loss — DC - 0.5 GHz
Isolation — DC - 0.5 GHz
VSWR RFC, RF1 - RF4 (On) DC - 0.5 GHz
VSWR RF1 - RF4 (Off) DC - 0.5 GHz
Trise, Tfall 10% to 90% — ns — 50 —
Ton, Toff 50% Control to 90% / 10% RF — ns — 150 —
Transients In-Band (peak-peak) — mV — 50 —
1 dB Compression Input Power 0.05 GHz
1,2
, TA = +25°C
DC - 1.0 GHz
DC - 2.0 GHz
DC - 3.0 GHz
DC - 1.0 GHz
DC - 2.0 GHz
DC - 3.0 GHz
DC - 1.0 GHz
DC - 2.0 GHz
DC - 3.0 GHz
DC - 1.0 GHz
DC - 2.0 GHz
DC - 3.0 GHz
0.5 GHz to 3 GHz
dB
dB
dB
dB
dB
dB
dB
dB
Ratio
Ratio
Ratio
Ratio
Ratio
Ratio
Ratio
Ratio
dBm
dBm
—
—
—
—
50
40
30
25
—
—
—
—
—
—
—
—
—
—
1.0
1.2
1.2
1.4
60
50
40
35
1.6:1
1.6:1
1.6:1
1.6:1
1.3:1
1.5:1
1.9:1
2.4:1
+20
+27
1.3
1.4
1.6
1.8
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1. All specifications apply when operated with bias voltages of +5V for Vcc and –5V for Vee.
2. When DC blocks are used, a 10K ohm return to GND is required on the RFC port.
GaAs SP4T Absorptive Switch, DC - 3 GHz
Electrical Specifications, TA = +25°C
Parameter Test Conditions Frequency Units Min Typ Max
3
IP3
IP2 3 Two-Tone Input Power up to +5 dBm 0.05 GHz
Vcc — — V 4.5 5.0 5.5
Vee — — V -8.0 — -5.0
Icc Vcc = 4.5 to 5.5 V
Iee Vee = -5.0V to -8.0V — mA — 0.1 1.0
Two-Tone Input Power up to +5 dBm 0.05 GHz
Vctl = 0 to 0.8V, or Vcc –2.1V to Vcc
0.5 GHz to 3 GHz
0.5 GHz to 3 GHz
dBm
dBm
dBm
dBm
—
—
—
—
— mA — 0.2 4.0
SW15-0314
V 3.00
+35
+46
+45
+60
—
—
—
—
Absolute Maximum Ratings
Parameter
Max Input Power
0.05 GHz
0.5 - 3.0 GHz 4
Bias Voltages
Vcc
Vee
Absolute Maximum
-0.5 to +5.5V
-8.5V to +0.5V
3,4
+27 dBm
+34 dBm
Control Voltage 5 -0.5V, to Vcc +0.5V
Operating Temperature -40°C to +85°C
Storage Temperature -65°C to +150°C
3. Operation of this device above any one of these parameters
may cause permanent damage.
4. When the input power is applied to the terminated port, the
absolute maximum is +30 dBm.
5. Standard CMOS TTL interface, latch-up will occur if logic
signal is applied prior to power supply.
Truth Table
TTL Control Inputs Condition of Switch
RF Common to Each RF Port
C1 C2 C3 C4 RF1 RF2 RF3 RF4
1 0 0 0 On Off Off Off
0 1 0 0 Off On Off Off
0 0 1 0 Off Off On Off
0 0 0 1 Off Off Off On
Functional Schematic
PIN 13 C3
C4
GND
GND
GND
RF3
GND
GND
RF4
GND
GND
PIN 24 GND
C2 PIN 12
C1
Vcc
Vee
GND
RF2
GND
GND
RF1
GND
GND
RFC PIN 1
0 = TTL Low 1 = TTL High
Specifications subject to change without notice.
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
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