M A COM SVC6310 Datasheet

Specifications Subject to Change Without Notice.

M/A-COM Inc. 1

North America: Tel. [phone] ♦ Asia/Pacific: Tel. [phone] ♦ Europe: Tel. [phone]
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GaAs Foundry Services
PROCESS PE3 PE3

V2.00

Features

• 0.5 µm MBE MESFET Technology for High Power

Applications

• MMICs up to 18 GHz

• 100 mm wafer diameter

• Layout and design assistance

• Space qualification

• Custom test and packaging

Description

M/A-COM’s PE3 process utilizes molecular beam epitaxy (MBE) to
implement a MESFET active layer structure that achieves high
efficiency and breakdown for multi-watt power applications thru
18GHz. The focus is on products for moderate to high volume
applications. M/A-COM offers a full compliment of foundry
services to meet the requirements for custom designing a MMIC­based die or packaged product.

Typical RF Performance

FC06 (6X150) 900 um FET

Param. Test Conditions Freq. Typ. Val.
MAG VDS = 8V, IDS = .40I

DSS

2/12GHz 22/13.5dB

P

SAT

VDS = 8V, IDS = .40I

DSS

2/12GHz 680/525mW/mm

PAE VDS = 8V, IDS = .40I

DSS

2/12GHz 50/41%

ft VDS = 8V, IDS = .40I

DSS

------ 20GHz

Ordering Information

Part Number Description
FE43-0001 PE3 Wafer
SVC6310 Mask Set

Electrical Specifications: T

A

= +25 °°C

Parameter Test Conditions Units Min. Typ. Max.
200um PCM FET
IDSS VDS = 3V, VGS = 0V mA/mm 180 240 310
DC GM VDS = 3V, IDS = 0.5IDSS mS/mm 125 150 185
Vp VDS = 3V, IDS = 0.025IDSS V -1.2 -1.8 -2.2
BVgd IG = 0.1mA/mm V -11 -15 ­RF GM VDS = 3V, IDS = 0.5IDSS mS 25 32 45
Cgs VDS = 3V, IDS = 0.5IDSS pF .140 .200 .280
Cgd VDS = 3V, IDS = 0.5IDSS pF .015 .022 .028
Cds VDS = 3V, IDS = 0.5IDSS pF .025 .038 .050
Ft VDS = 3V, IDS = 0.5IDSS GHz 20 26 34
Sheet Resistances
NDRS (N- GaAs) l = 20mA Ohms/sq 340 375 410
NCRS (NiCr) l = 10mA Ohms/sq 42 50 58
GFRS (Gate Metal) l = 20mA Ohms/sq - .027 .040
MIM Capacitors
Capacitance/unit area f = 1MHz pF/mm

2

360 400 440

Capacitor Leakage V = 10V µA - - 0.5

GaAs Foundry Services Process PE3

V2.00

Specifications Subject to Change Without Notice.

2 M/A-COM Inc.

North America: Tel. [phone] ♦ Asia/Pacific: Tel. [phone] ♦ Europe: Tel. [phone]

Fax [phone] Fax [phone] Fax [phone]

Normalized Nominal Models

Parameter 25% I

DSS

8 V

DS

50% I

DSS

8 V

DS

IDS mA/mm 62.62 127.96
gm mS/mm 140.37 155.44
Cgs pF/mm 1.178 1.303
Cgd pF/mm 0.072 0.059
Cds pF/mm 0.172 0.185
Td pS 5.574 5.502
Ri Ohms-mm 2.093 1.729
Gds mS/mm 9.214 7.929
Ggs mS/mm 0.168 0.093
Rg Ohms/mm 47.996 47.996
Rs Ohms-mm 0.827 0.827
Rd Ohms-mm 0.865 0.865
Lg nH/Finger 0.108 0.108
Ld nH/Finger 0.108 0.108
Cgp pF/mm 0.148 0.148
Cdp pF/mm 0.148 0.148

Mask Layer Assignments

LAYER PROCESS

CODE

PROCESS

DESCRIPTION
3 OH Ohmic
4 BI Boron Isolation
5 RD Resistor Deposition
7 GF Gate Finger
8 GL Gate Interconnect

10 TV Top via
11 OL Overlay
12 AP Air-post
13 AS Air-Span
25 BV Back-via
28 FP Final Passivation
29 ST Saw Street

NOTE: U n u sed layer numbe rs a re res erve d fo r fu ture use.

GMAX - 900um FET