M A COM SA65-0003, SA65-0003-TB, SA65-0003TR Datasheet

Down Converter, 1500 - 2000 MHz

V 1.00

SA65-0003

Features

n LNA Mixer integration.
n Typical conversion gain of 7 dB.

n Typical Two-Tone IM Ratio of ≥ 50 dBm.
n LO Drive-Level: +13 dBm.
n Surface Mount QSOP16 Package.
n Low Cost/High Performance.
n 50 ohm Nominal Impedance.

Description

M/A-COM’s SA65-0003 is an integrated assembly contain­ing a GaAs FET MMIC LNA and GaAs FET mixer. This
device is packaged in a 16-leaded QSOP plastic surface
mount package. The amplifier can be biased with either
+3V or +5V, the mixer requires no DC bias. The conversion
gain of the integrated combination is typically 6 dB at +3V
bias and 8 dB at +5V bias. The SA65-0003 is ideally
suited for RF/IF communications applications requiring
down conversion with some gain.

This MCM contains a mixer that is fabricated using a
mature 1-micron GaAs process, it also contains an LNA

that is fabricated using a low cost mature 0.5-micron gate
length GaAs MESFET process. Both die feature full
passivation for increased performance and reliability.

QSOP-16

Recommended PCB Layout

Functional Block Diagram

Down Converter, 1500 - 2000 MHz

Electrical Specifications TA = +25°C, Z0=50 Ohms, RF = -10 dBm1,
LO = +13 dBm, IDD ≈ 45 mA

Parameter Test Conditions1 Units Min Typical Max

Conversion Gain

Isolation 4 LO to RF IN

Reverse Isolation5 LNA +3V dB 30 40 —

VSWR LO

Input IP3

1. For IP3 measurements, RFIN = -24 dBm, this low RF IN level gets amplified through the LNA.

2. For IP3 measurements, RFIN2 = RFIN1 + 10 MHz, LO = RFIN1—140 MHz.

3. For IP3 measurements, IP3 = IMR/2 + PIN.

4. RF IN to IF Isolation is typically 0 dB.

5. Reverse Isolation is measured from IF to RFIN with the IF at –10 dBm, LO at +13 dBm.

6. The amplifier has a normal gain of 12.5 dB, 3V bias and 14.0 dB, 5V bias. Amplifier typical Noise Figure = 1.5 dB.

7. NFT = NF1 + (NF2 - 1)/G1

6,7

LNA +3V

1,2,3

LNA +3V

LNA +5V

LO to IF

RF IN

IF

LNA +5V

dB
dB

dB
dB

Ratio
Ratio
Ratio

dB
dB

3.1

4.6
29

19

—
—
—

13
21

SA65-0003

6.0

8.0
32

23

1.4:1

1.9:1

1.9:1

17.5
25

V 1.00

6.6

8.8
—

—

—

2.5:1

2.1:1
—

—

Absolute Maximum Ratings

Parameter Absolute Maximum

RF Input Power 9 +17 dBm

LO Drive Power 9 +23 dBm

VDD +10 VDC

Current 10 80 mA

Channel Temperature 11 +150°C

Operating Temperature -40°C to +85°C

Storage Temperature -65°C to +150°C

8. Operation of this device above any one of these
parameters may cause permanent damange.

9. Total power for RF and LO ports should not exceed +23
dBm.

10. When pin #2 is used to increase current—see note 6
above.

11. Thermal resistance (?jc) = +95°C/W.

8

Pin Configuration

Pin # Function Description

1 GND RF and DC Ground
2 RES External current control (optional)
3 GND RF and DC Ground
4 RF IN RF Input of the amplifier
5 GND RF and DC Ground
6 LO LO port of the mixer
7 GND RF and DC Ground
8 IF IF port of the mixer

9 RF GND RF and DC Ground
10 GND RF and DC Ground
11 RF
12 GND RF and DC Ground
13 RF OUT 12 RF output of the amplifier
14 GND RF and DC Ground
15 VDD Positive supply voltage
16 GND RF and DC Ground

12. The output port of the amplifier, RFOUT, and the input
port of the mixer, RF, are adjacently placed so that an
external filter can be used.

12

RF port of the mixer

Specifications subject to change without notice.

n North America: Tel. [phone]
n Asia/Pacific: Tel.[phone], Fax [phone]
n Europe: Tel. [phone], Fax[phone]

Visit www.macom.com for additional data sheets and product information.

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