RadarPulsedP o werModule,115,130,145W,100µsPulse
3.1 - 3.5 GHz
Features
●
NPN Silicon Power Transistor
●
Input and Output Matched to 50Ω
●
Duroid Circuit Board
●
Easily Combined for High Power Transmitters
●
Plated Copper Flange
Absolute Maximum Ratings at 25°C
Parameter Absolute Maximum
Suppy Voltage 40V
Input Power 26.5V
Output Power @ 3.3 GHz 200A
Thermal Resistance / Per 0.24A
Transistor
Power Dissipation 400W
Operating Case Temp. -30 to 1200°C
Storage Temperature -40 to +125°C
1. Operation of this device outside of these limits may cause
permanent damage.
1
PHA3135-130M
V4.00
Unless Otherwise Noted, Tolerances Are: Inches ±.005˝
(Millimeters ±13mm)
Electrical Characteristics at 25°C
Parameter Symbol Test Conditions Units Min. Max.
Output Power P
Output Power
Output Power
Power Gain
Power Gain
Power Gain
Collector Efficiency
Input Return Loss RL
Load VSWR Tolerance VSWR-T
Load VSWR Stability VSWR-S
Specifications Subject to Change Without Notice.
P
P
OUT
OUT
OUT
G
G
G
η
P
P
P
C
M/A-COM, Inc.
North America: Tel. (800) 366-2266 ■ Asia/Pacific: Tel. +81 (03) 3226-1671 ■ Europe: Tel. +44 (1344) 869 595
Fax (800) 618-8883 Fax +81 (03) 3226-1451 Fax +44 (1344) 300 020
VCC=36 V, PIN=21 W, F=3.1 GHz W 145 VCC=36 V, PIN=21 W, F=3.3 GHz
VCC=36 V, PIN=21 W, F=3.5 GHz
VCC=36 V, PIN=21 W, F=3.1 GHz
VCC=36 V, PIN=21 W, F=3.3 GHz
VCC=36 V, PIN=21 W, F=3.5 GHz
VCC=36 V, PIN=21 W, F=3.1, 3.3, 3.5 GHz
=36 V, PIN=21 W, F=3.1, 3.3, 3.5 GHz
V
CC
=36 V, PIN=21 W, F=3.1, 3.3, 3.5 GHz
V
CC
V
=36 V, PIN=21 W, F=3.1, 3.3, 3.5 GHz
CC
W 130 -
W 115 dB 8.4 dB 7.9 dB 7.4 -
%35dB 6 -
- - 3:1
- - 2:1
1