M A COM PH3135-65M Datasheet
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Radar Pulsed Power Transistor, 65W, 1OOp Pulse, 10% Duty
3.1 - 3.4 GHz
Features
l NPN Silicon Microwave Power Transistor
l Common Base Configuration
l Broadband Class C Operation
l High Efficiency Interdigitated Geometry
l Diffused Emitter Ballasting Resistors
l Gold Metalization System
l Internal Input and Output Impedance Matching
l HermeticMetaVCeramic Package
Absolute Maximum Ratings at 25°C
PH3134-65M
.650
(16.51)-
.225*.010
(5.72Z.25)
.225t010
(5.72i.25)
167i.010
uNLE.ss OTHERWISE NOTED, TOLERANCES ARE (nILLIMETERS * 13nH,
EMIlYER
INCHES k.005’
Electrical Characteristics at 25°C
Broadband Test Fixture impedances
F(GHz)
3.10
3.25
I
3.40
Specifications Sublect to Change Without Notlce.
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11.2-j11.7
11.5-j9.5
12.7-j7.6 1 6.4-j3.3 (
z&4
8.1 - j5.3
7.1 - j4.3
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Radar Pulsed Power Transistor, 65W
RF Test Fixture
GROUND
3 pucEs, /=-=-I
PC BOARDS,
ROGERS 58:
PH3134-65M
v2.00
i, B;i”^ J/y ,]
2052-5636-02
2 PLACES
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FZKR
BRASS
73050257-14 74250125-07
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Test Fixture PC Board Dimensions
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TOP
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COPPER
73050256-04
VIEW
MATSINK,
ALUHINUN
73050255-22
BOARD
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73O!iEV-15
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