M A COM PH3134-9L Datasheet

---

= ---

an AMP company

Radar Pulsed Power Transistor, SW, 300~s Pulse, 10% Duty

3.1 - 3.4 GHz

Features

NPN Silicon Microwave Power Transistor
Common Base Configuration
Broadband Class C Operation
High Efficiency InterdigitatedGeometry
Diffused Emitter Ballasting Resistors
Gold Metalization System
Internal Input Impedance Matching
Hermetic‘MetaVCeramic Package

Absolute Maximum Ratings at 25°C

Pti3134-9L

7

.093=.013

:2.29L.25>

3goF

:2.29i.25>

i

.mt.010

1

LlNLCSS 0THTRWISE NOTZD. TG’LCRANCES ARE <MILLIMETERS t23MM,

.004z.001

INCHES ~005

(1.52)

Electrical Characteristics at 25°C

Broadband Test Fixture Impedances

F(GHz)

3.10

3.25

3.40

Z,,(Q)

17.5

- j8.5 90.0 + j37.0

15.0

- j8.2 58.0 + j7.0

13.0

- j8.0 36.0 +j14.5

z&v

Specifications Subject to Change Without Notice.

Radar Pulsed Power Transistor, 9W

RF Test Fixture

ELECTROLYTIC CAPACITOR,
50 uF 50 V
MALLORY TT5OHSDA

GROUND RDLLCJVER

I

73050255-24

BASE PLATE,
ALUHINUH
73056258-04

BOARD CARRIER
BRASS
73050258-03

y

I,

BNC CONNECTOR,

f”;PA ELECTRONICS

INSULATED JUMPER

1 L TRANSISTCJ? LTRANSISTOR

CARRIER
CLIPPER
73050258-02

CLAMP,
NIIRYL
742500125-01

SOLDER LUG

FCHOKE,

3 TURN .lO’
NO. 26 HPN

SMA CONNECTOR
MIA-COM
2052-5636-02
2 PLACES

- CHIP CAPACIT

LBOnRD CARRIER

BRASS
73050258-03

DIA

‘DR

PH3134-9L

v2.00

Test Fixture PC Board Dimensions

TOP

VIEW

“a