M A COM PH3134-55L Datasheet

an AMP company

Radar Pulsed Power Transistor, SW, 300~s Pulse, 10% Duty

3.1 - 3.4 GHz PH3134-55L

Features

NPN Silicon Microwave Power Transistor
Common Base Configuration
Broadband Class C Operation
High Effkiency Interdigitated Geometty
Diffused Emitter Ballasting Resistors

Gold Metalization System
Internal Input and Output Impedance Matching
Hermetic Metal/Ceramic Package

Absolute Maximum Ratings at 25°C

Parameter

Collector-Emitter Voltage
Emitter-Base Voltage

Symbol Rating

V

ES

65 V

Units

t

.225+010

(5.?2%2!5>

---

6.72t.25)

+j,j

mLEcTIR

PAS

+-

f

--A 2%
.130

(3.30)

I fl

Electrical Characteristics at 25°C

Parameter

Collector-Emitter Breakdown Voltage

1 Collector-Emitter Leakage Current

Thermal Resistance

InDut Power

Power Gain

I

Collector Efficiency
Input Return Loss
Load Mismatch Tolerance

Symbol

BV,,, 65 - V I,=25 mA

1 lcFB

I GP I 7.5 I

‘Ic
RL

VSWR-T -

UNLESS OTHERWISE NOTED, TOLERANCES ARE (MIEMH$ER:.“&,,

Min Max Units

1 - 1 5.0 1 mA 1 V,,=36V

0.5

“CIW V,,=36 V, POUT- -55 W, F=3.10,3.25,3.40 GHz

9.0 w

V-,=36 V, P,,,,=55 W, F=3.10, 3.25,3.40 GHz

Test Conditions

- 1 dB 1 V,,=36 V, P,fi55 W, F=3.10,3.25,3.40 GHz

35 -

6 - dB I’,,=36 V, PO,,,=55 W, F=3.10,3.25,3.40 GHz

2:l -

%

V,,=36 V, PO,=55 W, F=3.10,3.25,3.40 GHz

V,,=36 V, PO,?55 W, F=3.25 GHz

I

I

Specifications Subject to Change Without Notice.

Radar Pulsed Power Transistor, 55W

RF Test Fixture

PC BOARDS,
ROGERS 5870

PH3134-55L

v2.00

BANANA JACKS

SMACONNECTOR

I,,,,

CARRIER CLAMP,
BRASS NmYL
73050257-14 7425095-07

kNS,,

Test Fixture PC Board Dimensions

TOP

kR AMSTOP [HEATSIN, i-BOARB

CARRIER
COPPER

73050256-04

VIEW

ALUMINUM
73050255-22

CARRIER
BRASS

73050257-1s

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