M A COM PH3134-30S Datasheet

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Radar Pulsed Power Transistor, 3OW, lps Pulse, 10% Duty

3.1 - 3.4 GHz

Features

l NPN Silicon Microwave Power Transistor
l Common Base Configuration

l Broadband Class C Operation
l High Efficiency Interdigitated Geometry
l Diffused Emitter Ballasting Resistors
l Gold Metalization System
l Internal Input and Output Impedance Matching

l Hermetic Metal/Ceramic Package

Absolute Maximum Ratings at 25°C

Parameter

1 Collector-Emitter Voltage 1 V,,, I 66

Emitter-Base Voltage

Collector Current (Peak)
Total Power Dissipation ( P,,, 1 350
JunctionTemperature
StorageTemperature

I Symbol I

V

sac
L

TJ

T

ST0

Rating

3.0

3.6

200

-65 to +200

( Units 1

I v I

I w I

“C
“C

PH3134-30s

v2.00

I

.iOO

(2.54)

A A

I

430

:!0.16)

il

.I00

(2.54)

A

103

(2.54) -: ?-

V

A

UN-ESS CTiERL’!SE NOTCD, XLi,?ANCES ARE

INCHES t.005’

(KILL:MTCRS =.l3MK>

Electrical Characteristics at 25°C

Specifications Subject to Change Without Notice.

Radar Pulsed Power Transistor, 30W

RF Test Fixture

PC BOARDS,

GROUND ROLLOVER,
2 PLACES-,

BNC CONNECTOR

PDMONA ELECT. 2451

f-1 /INSULATED JUMPER

,

-SOLDER LUG

ELECTROLYTIC CAPACITOR
MALLORY TTSOHSOA

SMA CONNECTOR ,

PH3134-30s

v2.00

HEATSINK,
ALUMINUM
73050255-24

BASE PLATE,
ALWIMJM

73050258-04

Test Fixture PC Board Dimensions

L

;;mR; CARWER

73050258-03

TOP

VIEV

-.J.J 1

TRANSISTOR CLANP,
NORYL

\

73050258-05

hW;;STOR CARRIER

7305025e-01

CHIP CAPACITCIR

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