M A COM PH3134-20L Datasheet
Radar Pulsed Power Transistor, 2OW, 300~s Pulse, 10% Duty
3.1 - 3.4 GHz
Features
NPN Silicon Microwave Power Transistor
Common Base Configuration
Broadband Class C Operation
High Efficiency Interdigitated Geometry
Diffused Emitter Ballasting Resistors
Gold Metalization System
Internal Input and Output Impedance Matching
Hermetic-Metal/Ceramic Package
Absolute Maximum Ratings at 25°C
Parameter
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Peak)
Total Power Dissipation P 146
Junction Temperature
StorageTemperature
( Symbol 1
V
ES
v
EBO
‘c
TOT
TJ
T
Sit
Rating
65
3.0
2.4
200
-65 to +200
Units
w
1 “C
“C
PH3134-2OL
:2.54)
V
V
A
.I672 010
i
LIN:;SS 3T”ERV!SE NC;D, TOLERbNCS A?E
ID0
(2.54) -
..^^
I-
-.I. -
!
.06o='.oozJ
~1.52Z.05)
INCKS k.005’
(M!cLIMETERS z.13MM)
304s 301
--J-f
1
Electrical Characteristics at 25°C
Parameter
Collector-Emitter Breakdown Voltage BV,,, 65 -
Collector-Emitter Leakage Current
Thermal Resistance
Input Power
Power Gain
Collector Efficiency
Input Return Loss
Load MismatchTolerance
1 Symbol ( Min ( Max 1 Units (
‘CES
R
THUCI
PIN GP
‘lC
RL 6 - dB ‘I,,=36 V, P,,e20 W, F=3.1,3.25,3.4 GHz
VSWR-T -
7.5 - dB Vct=36 V, PO,,=20 W, Fz3.1, 3.25, 3.4 GHz
35 -
TestConditions
V I,=10 mA
1.5 mA
1.2
3.56 W V,,=36 V,
vc,=40 v
“CM’ V,,=36 V, P,,f20 W, Fz3.1, 3.25,3.4 GHz
P 0UT=2O W, F=3.1, 3.25,3.4 GHz
% V,,=36 V, PO,,=20 W, Fz3.1, 3.25, 3.4 GHz
2:l -
V,,=36 V, Pour=20 W, F=3.25 GHz
Specifications Subject to Change Without Notice.
Radar Pulsed Power Transistor, 20W
RF Test Fixture
PC BOARDS,
BNC CONNECTOR
PDULINA ELECT, 2451
PH3134-2OL
v2.00
INSULATED JUMPER
BASE PLATE,
ALUMINUM
73050258~04
Test Fixture PC Board Dimensions
..-
.
?
L
BOARD CARRIER,
BRASS
73050258-03
TOP
WSGLnER LUG
-04 !
\-
\
bMS;STDR CARRIER
VIEV
FI FCl-Rlll YTIC CAPACI
M/A-&M
2052-5636-02
2 PLACES
CHIP CAPACITOR.
a;I pr
ATClOOA
1 TRANSISTllf? CLAMP,
NORYL
73050258-05
73050258-01
b
s
i
TOR
“a
Loading...