M A COM PH3134-11S Datasheet
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Radar Pulsed Power Transistor, 11 W, lps Pulse, 10% Duty
3.1 - 3.4 GHz
Features
NPN Silicon Microwave Power Transistor
Common Base Configuration
Broadband Class C Operation
High Efficiency Interdigitated Geometry
Diffused Emitter Ballasting Resistors
Gold Metalization System
Internal Input and Output Impedance Matching
Hermetic Metal/Ceramic Package
Absolute Maximum Ratings at 25°C
StorageTemperature
T
STG
-65 to +200
“‘2
I
I / I
.I00
;2.54>--- - -7(3.30:~
-.152-.x0
(3.86-25)
UNLESS IT-ERWISE NCTEC, TZLESANCES ARE
,250
75.35>-7
PH3134-11s
I ,130 I
.034'.031
INCES =.305’
:MJLLIMETERS =.!3MW>
Electrical Characteristics at 25°C
Parameter
Collector-Emitter Breakdown Voltage BV,,, 60 - V
Collector-Emitter Leakage Current
Thermal Resistance
input Power
Power Gain
Collector Efficiency
input Return Loss
Load Mismatch Tolerance
Symbol
‘Es
R
TWC,
P
IN
GP
%
RL
VSWR-T -
Min Max Units lest Conditions
I 1
1.25 mA
1.4 “CM’
1.74 w
8.0 - dB V,,=38 V, Pour=1 1 W, F=3.1, 3.25,3.4 GHz
35 -
6 - dB
2:l -
Broadband Test Fixture Impedances
F(GHz)
3.10
3.25
3.40
I I
z,,m z,Fcm
17.5 -
j8.5 90.0 + j37.0
15.0-
j8.2 58.0 + j7.0
13.0 - j8.0
36.0 + j14.5
I
I,=1 2.5 mA
V,,=36 V
I’,,=36 V, P,,,=ll W, F=3.1,3.25,3.4 GHz
V,c=36 V, P,,,.=ll W, F=3.1,3.25,3.4 GHz
% I’,,=36 V. P,,=ll W. F=3.1,3.25,3.4 GHz
I’,,=36 V, P,,,=ll W, F=3.1,3.25,3.4 GHz
Vcc=36 V, P,el 1 W, F=3.25 GHz
-
I
A
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Specifications Subject to Change Without Notice.
Radar Pulsed Power Transistor, 11 W
RF Test Fixture
ELECTROLYTIC CAPACITOR
50 uF 50 V
HALLDRY TTSOHSDA
BNC CONNECTOR
POHWA ELECTRONICS
2451
I I
PH3134-11s
v2.00
GROUND ROLLUVER
PC B
ROGE
.025’
ALUMINUM
73050258-03-
,\
0lClKE,
3 TURN, JO’ DIA
NU 26 -HPN
SMACONNECTOR
WA-COM
2052-5636-02
2 PLACES
73050258-02
TOP
VIEW
Test Fixture PC Board Dimensions
“a
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