M A COM PH2931-135S Datasheet

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an AMP company
Radar Pulsed Power Transistor, 135W, 20~s Pulse, 1% Duty
2.9 - 3.1 GHz
Features
NPN Silicon Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency InterdigitatedGeometry Diffused Emitter Ballasting Resistors
Gold Metalization System Internal Input and Output Impedance Matching Hermetic‘ FleWCeramic Package
Absolute Maximum Ratinas at 25°C
I Parameter
Collector-EmitterVoltage V Emitter-Base Voltage
Collector Current (Peak) Total Power Dissipation JunctionTemperature StorageTemperature
1 Symbol 1 Rating 1 Units I
80
3.0 12
580 200 “C
-65 to +200
V
P
T
CES
ES0
‘c TOT
T,
STG
W
“C
PH2931 -I 3%
C+!:TiER
I
V V
A
UNLESS OTELRWISE NDTE% TOLERANCES ARE (M,LLIMET~~S = 13MM)
I
.003~.031
.060i.DOE
(1.52’.05)
INCHES t.005’
f
Electrical Characteristics at 25°C
Specifications Subject to Change Without Notice.
Radar Pulsed Power Transistor, 135W
RF Test Fixture
PC BOARD, ROGERS
6010.5 .025’
ELECTROLYTIC CAPACITOR 50 UF 50 V MALLORY TTZOMSOA
SMA CONNECTOR
CHIP CAPACITOR,
PH2931-135s
v2.00
ALUMINUM 73050255-09
Test Fixture PC Board Dimensions
.-.-
COPPER
73050256-04
TOP VIEW
i BOARD CARRIER
BRASS 2 PLACk
73050257-13
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