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Radar Pulsed Power Transistor, 135W, 20~s Pulse, 1% Duty
2.9 - 3.1 GHz
Features
NPN Silicon Power Transistor
Common Base Configuration
Broadband Class C Operation
High Efficiency InterdigitatedGeometry
Diffused Emitter Ballasting Resistors
Gold Metalization System
Internal Input and Output Impedance Matching
Hermetic‘ FleWCeramic Package
Absolute Maximum Ratinas at 25°C
I Parameter
Collector-EmitterVoltage V
Emitter-Base Voltage
Collector Current (Peak)
Total Power Dissipation
JunctionTemperature
StorageTemperature
1 Symbol 1 Rating 1 Units I
80
3.0
12
580
200 “C
-65 to +200
V
P
T
CES
ES0
‘c
TOT
T,
STG
W
“C
PH2931 -I 3%
C+!:TiER
I
V
V
A
UNLESS OTELRWISE NDTE% TOLERANCES ARE (M,LLIMET~~S = 13MM)
I
.003~.031
.060i.DOE
(1.52’.05)
INCHES t.005’
f
Electrical Characteristics at 25°C
Specifications Subject to Change Without Notice.
Radar Pulsed Power Transistor, 135W
RF Test Fixture
PC BOARD,
ROGERS
6010.5 .025’
ELECTROLYTIC CAPACITOR
50 UF 50 V
MALLORY TTZOMSOA
SMA CONNECTOR
CHIP CAPACITOR,
PH2931-135s
v2.00
ALUMINUM
73050255-09
Test Fixture PC Board Dimensions
.-.-
COPPER
73050256-04
TOP VIEW
i BOARD CARRIER
BRASS 2 PLACk
73050257-13