M A COM PH2856-160 Datasheet
an AMP cotn~any
Linear Accelerator Pulsed Power Transistor, 16OW, 12~s Pulse, 10% Duty
2.856 GHz
Features
l NPN Silicon Microwave Power Transistor
l Common Base Configuration
l Class C Operation
l High Efficiency Interdigitated Geometry
l Diffused Emitter Ballasting Resistors
l Gold Metalization System
l Internal Input and Output Impedance Matching
l Hermetic-Metal/Ceramic Package
Absolute Maximum Ratings at 25°C
Parameter
Collector-Emitter Voltage V
Emitter-Base Voltage V
] Collector Current (Peak) ) lr 1
Total Power Dissipation P
JunctionTemperature
StorageTemperature T
Symbol Rating
CES
EBO
65
3.0
15.0
TOT
T,
STG
700
200 “C
-65 to +200
Units
V
V
I * I
W
“C
PH2856-160
<?.?9'.25)
Electrical Characteristics at 25°C
Parameter
Collector-Emitter Breakdown Voltage
Collector-Emitter Leakage Current
Thermal Resistance
input Power
Power Gain
Collector Eff iciency
Input Return Loss
Load Mismatch Tolerance
Symbol
BVCES
‘Es
R
THIJC)
P
IN
GP
%
RL 6 - dB
VSWR-T - 3:l -
Test Fixture Impedance
F(GHz)
2.856
Z,(Q)
4.4 - j4.9
Min Max Units Test Conditions
I,=40 mA
65 -
V
7.5 mA V,,=36 V
“C/W V,,=40 V, PO,=1 60 W, F=2.856 GHz
0.25
28.5 w
7.5 - dB
40 - %
V,,=40 V, PO,,=160 W, F=2.856 GHz
V,,=40 V, PO,=160 W, F=2.856 GHz
V,,=40 V, PO,,=160 W, F=2.856 GHz
V,,=40 V, PO& 60 W, F=2.856 GHz
V,,=40 V, PO,,=1 60 W, F=2.856 GHz
TEST GXTURE
:N=Vi
q,,(n)
CIRCU!T
L
4.6-j1.6
50R
-
-
3-r
21: --ZOF
YESi FIXTURE
0ur=v7 -i
-
CIRCUIT
5OR
-c
L
-
Specifications Subject to Change Without Notice.
Linear Accelerator Power Transistor, 160W
RF Test Fixture
BANANA JACK,
2 PLACES
PH2856-160
v2.00
PC BOARD,
ROGERS 6010.5 ,025’
2 PLACES --T---T
LHEATSINK ~~f!k;iit?:, i BOARD CARRIER,
ALUMINUM COPPER
73050255-09
\
I
73050256-02
TDP
VIEW
BRASS 2 PLACES
73050257-13
CARBON RESISTOR,
5.1 OHM .25 W
ELECTROLYTIC CAPACITOR,
50 uF 50 V
MALLORY TTSOMSOA
CHIP CAPACITOR .1 UF
JOHANSON TYPE S41
X7R DIELECTRIC
L CHIP CAPACITOR,
22 pF
ATClOOA
SMACONNECTOR
M/A-COU
2052-5636-02
2 PLACES
Test Fixture PC Board Dimensions
“a
b
$
L200’
b
5
.800’
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