an AMP wmDanv
== 5 =
Radar Pulsed Power Transistor, 75W, 300~s Pulse, 10% Duty
2.7 - 3.1 GHz
Features
NPN Silicon Microwave Power Transistor
Common Base Configuration
Broadband Class C Operation
High Effkiency Interdigitated Geometry
Diffused Emitter Ballasting Resistors
Gold Metalization System
Internal Input and Output Impedance Matching
Hermetic‘MetaUCeramic Package
Absolute Maximum Ratings at 25°C
Parameter
Symbol
Collector-Emitter Voltage V
Emitter-Base Voltage
Collector Current (Peak)
Total Power Dissipation P
Junction Temperature
StorageTemperature
V
TJ
T
CES
ES0
‘c
TOi
SW
Rating Units
65
3.0 V
7.0 A
190
200
-65 to+200 j 0~
/ “C
V
w I
PI-f2731 -75L
.167=.010
.06O=.CO3 1’
u.s2:.05:
UNLYSS O-HfRW:S: KGTZD, Y--RANKS ARE :MILL,METERS r,13MMj
iNCHES =.005-’
Electrical Characteristics at 25°C
Broadband Test Fixture Impedances
F(GHr)
2.70
2.90
3.10 5.2-j10.0
I I
Z,,(Q) Z,,(Q)
6.9
- j12.2 4.5
6.0
- jl 1.7 3.9
3.4 - j4.8
- j6.8
- j6.1
1
TZST ?iXTdR’
INPUT OUTPUT
f.:RCLI:T
TEST rIXTURE
CiRtUIT
i
-
I
Specifications Subject to Change Without Notlce.
Radar Pulsed Power Transistor, 75W
RF Test Fixture
.,
INPUT
50 OHMS
PH2731-75L
v2.00
OUTPUT
50 DHMS
FT4Rl--S
Cl
c2
Ql
BOARD TYPE:
ARTWURK DIMENSIONS IN MILS
/-IS-l-
36 pF ATC SIZE A
50 UF 50 VOLTS
PH2731-75L
ROGERS 6010,s ,025” THICK, ER = 1015