M A COM PH2729-8.5M Datasheet
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Radar Pulsed Power Transistor, 8.5W, loops Pulse, 10% Duty
2.7 - 2.9 GHz
Features
NPM Silicon Microwave Power Transistor
Common Base Configuration
Broadband Class C Operation
High Efficiency Interdigitated Geometry
Diffused Emitter Ballasting Resistors
Gold Metalization System
Internal Input and Output Impedance Matching
Hermetic MtxaKeramic Package
Absolute Maximum Ratings at 25°C
PH2729-8SM
903
(22.86:
v2.00
Electrical Characteristics at 25°C
Parameter
Collector-Emitter Breakdown Voltage
Collector-EmitterLeakage Current
Thermal Resistance
Output Power
Power Gain
Collector Efficiency
I-
Input Return Loss
Load Mismatch Tolerance VSWR-T - 3:l
Load Mismatch Stablilitv
Symbol
BVcEs 65 -
‘ES
R
THIJC~
P
OUT
GP
I T(c Id -I
RL
VSWR-S -
Min Max Units lest Conditions
8.5 -
8.1 -
6 -
Broadband Test Fixture Impedances
F(GHz)
2.70
2.80
2.90
z,,(Q)
40-j12
38-j14 20 + j2.0
35-j16 16ej2.4
z,,(n) .
25 + j3.5
V
I,=1 0 mA
1.5 mA v,,=40 v
“C/W’
2.2
1.51
V,,=36 V, P,,=1.3 W, F~2.7, 2.8, 2.9 GHz
W
V,,=36 V, P&.3 W, F=2.7,2.8,2.9 GHz
dB
1 V,,=36 V, P,,=1.3 W, F-2.7, 2.8,2.9 GHz
%
I V,,=36 V, P&.3 W, F=2.7, 2.8.2.9 GHz
dB
( V,,=36 V, P,,=1.3 W, F=2.7,2.8,2.9 GHz
-
j V,,=36 V, P,,=l.3 W, F=2.7,2.8,2.9 GHz
-
/ V-,=36 V, P..,=1.3 W, F=2.7. 2.8,2.9 GHz
-
1
-
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Specifications Subject to Change Without Notice.
Radar Pulsed Power Transistor, 8.5W
RF Test Fixture
ELECTRDLYTIC CAPACITOR
50 uF 50 V
MALLORY TTXIHSOA
GROUND ROLLOVER
ROGERS 6010.5
HEATSINK
ALUHINLJH
7%Sii255-24-f) /
BOARD
CARRIER
BRASS
73050258-03
BOARD
CARRIER
BRASS
73050258-06
TOP
BNC CDNNECTDR
POMUNA ELECT.
2451
BASE PLATE,
ALUMINUM
73050258-04
VIEW
PH2729-8.5M
v2.00
INSULATED JUMPER
CHIP CAPACITOR,
COPPER
73050258-01
1 L TRANSISTUR
CLAMP,
NORYL
73050258-05
Test Fixture PC Board Dimensions
“a
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