M A COM PH2729-65M Datasheet
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Radar Pulsed Power Transistor, 65W, loops Pulse, 10% Duty
2.7 - 2.9 GHz
Features
NPN Silicon Microwave Power Transistor
Common Base Configuration
Broadband Class C Operation
High Efficiency Interdigitated Geometry
Diffused Emitter Ballasting Resistors
Gold Metalization System
Internal Input and Output Impedance Matching
Hermetic Metal/Ceramic Package
Absolute Maximum Ratings at 25°C
Parameter 1 Symbol 1
1 Collector-Emitter Voltage 1 V,,, 1 65
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Emitter-Base Voltage
Collector Current (Peak)
Total Power Dissipation / P,,, I
JunctionTemperature
Storage Temperature
V
ES0
L
TJ
T
STG
Rating
3.0
8.0 A
330
200
-65 to +200
1 Units 1
I v I
V
I w I
“C
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PH2729-65M
I .300
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UNLESS CT;ERVISE NOTED, TDLERANCES A4E
(22.86)
INCHIS 5.005’
:WILLIME?;RS :.13MH)
v2.00
Electrical Characteristics at 25°C
Parameter
Collector-Emitter Breakdown Voltaoe
i Collector-Emitter Leakage Current
Thermal Resistance
Input Power
Power Gain
Collector Efficiency
I-
Input Return Loss
Load Mismatch Tolerance
Load Mismatch Stablilitv
Symbol Min
BV,,, 65 - V I,=50 mA
I lCES
R
TWC;
PIN -
G.
I rlc I 40 I -
RL
VSWR-T VSWR-S -
Broadband Test Fixture Impedances
F(GHz)
2.70
2.80
2.90
Z,(Q)
7.8 - j8.3
7.3 - j6.7
7.2 - j5.0 8.6
9.3
9.0
Units Test Conditions
Max
1 - ) 7.5 1 mA 1 V,,=36V
0.45
“cJ’.t’ 1 Vo=36 V, PO,=65 W, F=2.7.2.6,2.9 GHz
9.0 w
a.5 -
1 %
9 - dB V,,=36 V, Poe65 W. F=2.7,2.8,2.9 GHz
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z,,(*)
- j8.9
- j8.4
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V,,=36 V. PO,=65 W, F=2.7,2.6,2.9 GHz
dB
V-,=36 V, PA,,=65 W. F=2.7,2.6,2.9 GHr
1 V,,=36 V, PO,=65 W, F=2.7,2.6,2.9 GHz
V,,=36 V, Poe65 W. F=2.7,2.8,2.9 GHz
VP,=36 V, P,,,=65 W, F=2.7,2.6,2.9 GHz
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Specifications Subject to Change Without Notice.
Radar Pulsed Power Transistor, 65W
RF Test Fixture
PC BOARD,
ROGERS 6010.5 .025’
2 PLACES\\
R;&Y;IC CAPACITOR,
MALLORY TT5OHSOA
SMACONNECTOA
MIA-COM
2052-56X-02
2 PLACES
CHIP CAPACITOR
20 pF
ATCIOOA
PH2729-65M
v2.00
ALUMINUM
73050255-09
Test Fixture PC Board Dimensions
CIIPPER
73050256-04
TOP
VIEV
L BOARD CARRIER
BRASS 2 PLACES
73050257-13
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