M A COM PH2729-25M Datasheet
PH2729-25M
RADAR PULSED POWER TRANSISTOR
25 WATTS, 2.70-2.90 GHz, 100µs PULSE, 10% DUTY
FEATURES
M/A-COM PHI, INC.
OUTLINE DRAWING
∗ NPN Silicon Microwave Power Transistor
∗ Common Base Configuration
∗ Broadband Class C Operation
∗ High Efficiency Interdigitated Geometry
∗ Diffused Emitter Ballasting Resistors
∗ Gold Metalization System
∗ Internal Input and Output Impedance Matching
∗ Hermetic Metal/Ceramic Package
ABSOLUTE MAXIMUM RATINGS AT 25°C
Parameter Symbol Rating Units
Collector-Emitter Voltage V
Emitter-Base Voltage V
Collector Current (Peak) IC 4.0 A
Total Power Dissipation
@ +25°C
Storage Temperature T
Junction Temperature Tj 200 °C
ELECTRICAL CHARACTERISTICS AT 25°C
Parameter Symbol Min Max Units Test Conditions
Collector-Emitter Breakdown
Voltage
Collector-Emitter Leakage
Current
Thermal Resistance R
Output Power PO 25 - W VCC=36 V, Pin=3.0 W, F=2.7, 2.8, 2.9 GHz
Power Gain GP 9.2 - dB VCC=36 V, Pin=3.0 W, F=2.7, 2.8, 2.9 GHz
Collector Efficiency
Input Return Loss RL 6 - dB VCC=36 V, Pin=3.0 W, F=2.7, 2.8, 2.9 GHz
Load Mismatch Tolerance VSWR-T - 3:1 - VCC=36 V, Pin=3.0 W, F=2.7, 2.8, 2.9 GHz
Load Mismatch Stability VSWR-S - 1.5:1 - VCC=36 V, Pin=3.0 W, F=2.7, 2.8, 2.9 GHz
BROADBAND TEST FIXTURE IMPEDANCE
F (GHz)
2.70 38 - j14.4 17.1 - j8.7
2.80 35 - j16.3 15.0 - j8.7
2.90 33 - j17.8 13.3 - j8.3
Z IF (Ω) Z OF (Ω)
65 V
CES
3.0 V
EBO
P
120 W
TOT
-65 to +200 °C
STG
BV
65 - V IC=10mA
CES
I
- 1.5 mA VCE=40V
CES
- 1.25 °C/W VCC=36 V, Pin=3.0 W, F=2.7, 2.8, 2.9 GHz
TH(JC)
η
45 - % VCC=36 V, Pin=3.0 W, F=2.7, 2.8, 2.9 GHz
TEST FIXTURE
INPUT
CIRCUIT
50Ω 50Ω
Z
IF
TEST FIXTURE
OUTPUT
CIRCUIT
Z
OF
M/A-COM POWER HYBRIDS OPERATION • 1742 CRENSHAW BLVD • TORRANCE, CA 90501
(310) 320-6160 • FAX (310) 618-9191
TEST FIXTURE ELECTRICAL SCHEMATIC - PH2729-25M
M/A-COM, PHO RESERVES THE RIGHT TO MAKE CHANGES AND IMPROVEMENTS WITHOUT NOTICE. DS046 Rev 05/25/93
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