M A COM PH2729-150M Datasheet

Radar Pulsed Power Transistor—150 Watts

2.7-2.9 GHz, 100µs Pulse, 10% Duty

Features

• NPN Silicon Microwave Power Transistor

• Common Base Configuration

• Broadband Class C Operation

• High Efficiency Interdigitated Geometry

• Diffused Emitter Ballasting Resistors

• Gold Metallization System

• Internal Input and Output Impedance Matching

• Hermetic Metal/Ceramic Package

Description

M/A-COM’s PH2729-150M is a silicon bipolar NPN transistor
specifically designed for use in high efficiency, common base,
Class C microwave power amplifiers. It is ideally suited for S­Band radar and pulsed power applications where the highest
gain and saturated power are required. The flanged ceramic
package provides for excellent thermal and hermetic prop erties,
which when combined with M/A-COM’s mature transistor fab­rication technology results in the highest reliability available.

PH2729-150M

1

Outline Drawing

Notes: (unless otherwise specified)

1. Tolerances are: inches ± .005” (millimeters ± 0.13mm)

Absolute Maximum Rating at 25°C

Parameter Symbol Rating Units

Collector-Emitter Voltage V
Emitter-Base Voltage V
Collector Current (Peak) I
Power Dissipation P
Storage Temperature T
Junction Temperature T

Electrical Specifications at 25°C=

Symbol Parameter Test Conditions Min Max Units

BV

I

CES

RTH

P

OUT

G

η

RL Input Return Loss VCC = 38 V, PIN = 22 W, f = 2.7, 2.8, 2.9 GHz 10 - dB

OD-S Overdrive Stability (Osc.) VCC = 38 V, PIN = 27.5 W, f = 2.7, 2.8, 2.9 GHz - 60 dBc
VSWR-T Load Mismatch Tolerance VCC = 38 V, PIN = 22 W, f = 2.7, 2.8, 2.9 GHz - 2:1 ­VSWR-S Load Mismatch Stability VCC = 38 V, PIN = 22 W, f = 2.7, 2.8, 2.9 GHz - 1.5:1 -

Collector-Emitter Breakdown Voltage IC = 40 mA 65 - V

CES

Collector-Emitter Leakage Current V
Thermal Resistance VCC = 38 V, PIN = 22 W, f = 2.7, 2.8, 2.9 GHz - 0.4 °C/W

(JC)

Output Power VCC = 38 V, PIN = 22 W, f = 2.7, 2.8, 2.9 GHz 150 - W
Power Gain VCC = 38 V, PIN = 22 W, f = 2.7, 2.8, 2.9 GHz 8.3 - dB

P

Collector Efficiency VCC = 38 V, PIN = 22 W, f = 2.7, 2.8, 2.9 GHz 38 - %

=

==

= 38 V - 7.5 mA

CE

CES

EBO

C

D

STG

J

65 V

3.0 V

15.0 A
500 W

-65 to +200 °C
200 °C

Specifications subject to change without notice.

 North America: Tel. [phone], Fax [phone]
 Asia/Pacif ic: Tel.[phone], Fax [phone]
 Europe: Tel. [phone], Fax[phone]

Visit www.macom.com for additional data sheets and product information.

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Radar Pulsed Power Transistor—150 Watts, 2.7-2.9 GHz, 100µs Pulse, 10% Duty

Test Fixture Matching Circuit Dimensions

Circuit Dimensions

1. PCB Material Rogers 6010.5 .025” Thk.

1

Assembly View

PH2729-150M

TEST FIXTURE

INPUT

CIRCUIT

50 Ω 50 Ω

Z

IF

TEST FIXTURE

OUTPUT

CIRCUIT

Z

OF

Typical Performance Curves

Typical Power Transfer vs. Frequency

210
190
170
150
130
110

90

Power Output (Wpk)

70
50

10 12 14 16 18 20 22 24 26 28 30

Power Input (Wpk)

2.7 GHz

2.8 GHz

2.9 GHz

Broadband Test Fixture Impedance

F (GHz)

2.70 4.8 – j6.9 1.7 – j3.2

2.80 4.8 – j6.6 1.7 – j2.8

2.90 4.8 – j6.4 1.7 – j2.4

Typical Power Gain and Collector
Efficiency

10

9.5
9

8.5
8

Power Gain (dB)

7.5
7

2.65 2.7 2.75 2.8 2.85 2.9 2.95

Z IF (Ω) Z OF (Ω)

Power G ain (d B )
Nc (%)

Frequency (G Hz )

50
48
46
44
42
40
38
36
34
32

Collector Efficiency (%)

30

Specifications subject to change without notice.

 North America: Tel. [phone], Fax [phone]
 Asia/Pacif ic: Tel.[phone], Fax [phone]
 Europe: Tel. [phone], Fax[phone]

Visit www.macom.com for additional data sheets and product information.

V 2.0

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