M A COM PH2729-130M Datasheet
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Radar Pulsed Power Transistor, 13OW, IOOps Pulse, 10% Duty
2.7 - 2.9 GHz PH2729430M
Features
NPN Silicon Microwave Power Transistor
Common Base Configuration
Broadband Class C Operation
New Power Dense Interdigitated Geometry
Diffused Emitter Ballasting Resistors
Gold Metalization System
Internal Input and Output Impedance Matching
Hermetic MetaUCeramic Package
,L”“-.“.”
Absolute Maximum Ratings at 25°C
Parameter Symbol Rating Units
Collector-EmitterVoltage V
Emitter-Base Voltage
Collector Current (Peak)
Total Power Dissipation P
1 JunctionTemperature 1 T, 1 200 1 “C I
StorageTemperature
ES
I vm I 3.0 I v I
‘c
TPlT
1 T,,,
63
12.5
575
1 -65 to+200 1 “C 1
V
A
W
:2.54=.25)
t
<1.52-'.CS)
INCHCS 5.005’
Electrical Characteristics at 25°C
L&et& 1 Svmbol 1 Min 1 Max 1 Units 1
Collector-Emitter Breakdown Voltage
Collector-Emitter Leakage Current
Thermal Resistance
Outout Power
r~
Power Gain
Collector Efficiency
Input Return Loss
Overdrive Stabilitv
Load Mismatch Tolerance
Load Mismatch Stablility
BV,,, 65 -
I
CES
R
WJCI
P
^,_
““I
GP
llr
RL
OD-S VSWR-T VSWR-S -
130 -
7.0 - dB
40 -
,
6 - dB
7.5 mA
0.3
1.0 dB
3:l 2:l -
V
“WW V,,=36 V, P,N=26 W, F=2.7,2.9 GHz
W
%
Test Conditions
I,=40 mA
VcE=36 V
V-,=36 V, P,,=26 W, F=2.7.2.9 GHz
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V,,=36 V, P,,=26 W, F=2.7,2.9 GHz
V,,=36 V, P,,=26 W, F=2.7,2.9 GHr
Vcc=36 V, P,,=26 W, F=2.7,2.9 GHz
VP,=36 V, P,,=26 W, F=2.7.2.9 GHz
V,,=36 V, P,,=26 W, F=2.7.2.9 GHz
Vccs36 V, P,,=26 W, F=2.7,2.9 GHz
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This Data Sheet Contains Typical Electrical Specifications Which May Change Prior to Final Introduction
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