M A COM PH2729-110M Datasheet

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T=- ‘5

Radar Pulsed Power Transistor, IlOW, loops Pulse, 10% Duty

2.7 - 2.9 GHz

Features

NPN Silicon Microwave Power Transistor
Common Base Configuration
Broadband Class C Operation
High Efficiency Interdigitated Geometry
Diffused Emitter Ballasting Resistors
Gold Metalization System
Internal Input and Output Impedance Matching
Hermetic Metal/Ceramic Package

Absolute Maximum Ratings at 25°C

Parameter Symbol

Collector-Emitter Voltage

StorageTemperature

V

CES

T -65 to +200

STC

Rating Units

65 V

“C

PH2729-11 OM

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Electrical Characteristics at 25°C

Parameter

Collector-Emitter Breakdown Voltage

Collector-Emitter Leakage Current
Thermal Resistance
Output Power
Power Gain
Collector Efficiency
Input Return Loss

Symbol

BV,,, 65 -

I

CES

R

-w(X)

P

OUT

GP

%

RL 6 - dB

Min

110 - W

6.8 - dB

Overdrive Stability OD-S - 1.0 dB
Load Mismatch Tolerance
Load Mismatch Stablility

VSWR-T -

VSWR-S -

Max Units lest Conditions

7.5 mA V,,=36 V

0.3

35 - %

2:l -

1.5:1 - I’,,=36 V, P,,=23 W, F=2.7,2.8,2.9 GHz

Broadband Test Fixture impedances

1

I

2.70

2.80

2.90

4.3 - j7.0

I

4.4 - j6.4

I

I

4.6 - j5.8 2.9 - j3.1

2.6 - j3.9

I

2.6 - j3.5

I

I

I
I

V I,=40 mA

“CM. V,,=36 V, P,,=23 W, F=2.7,2.8,2.9 GHz

V,,=36 V, P,,=23 W, F=2.7,2.8,2.9 GHz
V,,=36 V, P,,=23 W, F=2.7,2.8,2.9 GHz

V,,=36 V. P,,=23 W, F=2.7,2.8,2.9 GHz
V,,=36 V, P,,=23 W, F=2.7,2.8,2.9 GHz
‘I,,=36 V, P,,=23 W, F=2.7,2.8,2.9 GHz
V,,=36 V, P,,=23 W, F=2.7,2.8,2.9 GHz

TfST ::XTUR: TESi ;IXTlJRE

A-

-

-

ZIRCWT

I -

-

-

3 - I

OUTPUT

CIRttliT

-

Specifications Subject to Change Without Notice.

Radar Pulsed Power Transistor, 11 OW

RF Test Fixture

B4N4NA JACKS

SMA CONNECTOR

2052-5636-02

PH2729-11 OM

v2.00

) 111 -‘LpH, j-%NSON 5oos41V104KP4

VRAP AROUND
GROWD RIBBON

ci7-11-

Test Fixture PC Board Dimensions

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