an AMP cormany
CW Power Transistor, 3.5W
2.3 GHz
Features
NPN Silicon Microwave Power Transistor
Common Base Configuration
Class C Operation
Interdigitated Geometry
Diffused Emitter Ballasting Resistors
Gold Metalization System
Hermetic MetalCeramic Package
Absolute Maximum Ratings at 25°C
Parameter Symbol Rating
PH2323-3
v2.00
Units
Electrical Characteristics at 25°C
Parameter
Collector-Emitter Breakdown Voltage
Collector-Emitter Leakage Current
Input Power
Power Gain
CollectorEfficiency
Input Return Loss
Load Mismatch Tolerance
1 Symbol 1 Min 1 Max 1 Units 1
BV,,, 60 1 - 1
I
CES
PIN GP
‘Ic
RL
VSWR-T -
Test Fixture Impedances
F(GHz)
2.30 6.5 - j23.0
Z,(Q)
8 -
30 -
6 - dB
z&4
6.3 + j5.4
Test Conditions
V
I,=5 mA
1.0 mA
0.48 w V,,=28 V, PoUT=3.0 W, F=2.3 GHz
3:l -
V,,=28 v
dB 1 V,,=28 V, P,,?3.0 W, F=2.3 GHz
% 1 V,,=28 V, P,LI.F3.0 W, F=2.3 GHz
V,,=28 V, P,,=3.0 W, F=2.3 GHz
V,,=28 V, P,,,.=3.0 W, F=2.3 GHz
7:s; =:XT”Rr TES’ FIXTURE
INPLI-
C:RCiJ:T
50R i son
-
-
JLl%JT -
CIRLIIT
-I
1
-
-
CW Power Transistor, 3SW
PH2323-3
v2.00
RF
vTest
Fixture
PC BOARDS
ROGERS 6610.5
.02S”
2 PLACES -
BANANA JACKS
r
GROUND SHIM
2 PLACES
/ JUMPER
CARRIER
BRASS
73050257-13
Test Fixture PC Board Dimensions