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an AMP comDanv
CW Power Transistor, 1 W
2.3 GHz
Features
l NPN Silicon Microwave Power Transistor
l Common Base Configuration
l Class C Operation
l Interdigitated Geometry
l Diffused Emitter Ballasting Resistors
l Gold Metalization System
l Hermetic Metal/Ceramic Package
Absolute Maximum Ratings at 25°C
PH2323-1
,
I
.lOCZ31C
:2.s4.25,
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,233
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1
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UN-53 3TRiRWiSE NOTED, TDLERANCES ARE :HILLI,,ETERS t,,3,,M>
v2.00
Electrical Characteristics at 25°C
Test Fixture Impedances
F(GHz)
2.30 12.5 - i26.0
zsw
z,,w
3.7+j10.4
CW Power Transistor, 1 W
RF Test Fixture
PH2323-1
v2.00
34N4UA JACKS
2 ?L4,ES
MbiL3ZY
TT5CY50A
- JUMPER
SMACONNECTOR
MIA-COM
2052-5636-02
2 PLACES
Test
LIEATS!NK,
4LtJMINUM
73050255-03
Fixture PC
BOARD
CARRIER
BRASS
73c50257-13
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Board Dimensions
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CDP?E-R ’
73050256-12
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1, L TR~NS:STLIR
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CL 4KP,
N3RYL
74250125-35
2 PLACES
BOARD
ZARRIFD
iRASi-”
73350257-13