M A COM PH2226-110M Datasheet

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Radar Pulsed Power Transistor, IlOW, loops Pulse, 10% Duty

2.25 - 2.55 GHz

Features

l NPN Silicon Power Transistor
l Common Base Configuration
l Broadband Class C Operation
l Diffused Emitter Ballasting Resistors

l Gold Metalization System
l Internal Input Impedance Matching
l Hermetic Metal/Ceramic Package

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Absolute Maximum Ratings at 25°C

PH2226-11 OM

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.175+ 015

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J571.310

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UNlESS II--ERWISE NOTED, TLLERANES ARE <MI-LiMFiERS z:3MHI

(22 95)

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(1 52z.05)

ISCFZS i.005’

v2.00

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Collector Efficiency
Input Return Loss
Load Mismatch Tolerance
Load Mismatch Stablility

%

I

RL
VSWR-T ­VSWR-S -

Broadband Test Fixture impedances

F(GHt)

2.25

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I- ~

2.40

2.55

I

4,(Q)

2.8 - i3.4

2.9 - j3.0

3.1 - j2.6

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45 -

9 - d0 V,,=36 V, P&8 W, Fz2.2. 2.4,2.6 GHz

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1S:l - V,,=36 V, P&8 W, F=2.2.2.4,2.6 GHz

L(Q)

4.1 - j2.9

3.8-j2.9 1

3.3 - j2.7

% Vcc=36 V, P&6 W, F=2.2,2.4, 2.6 GHz

I’,,=36 V, P&8 W, F=2.2,2.4,2.6 GHz