M A COM PH1920-45 Datasheet
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Wireless Bipolar Power Transistor, 45W
1930 - 1990 MHz
Features
NPN Silicon Power Transistor
Common Emitter Class AI3 Operation
Internal Input and Output Impedance Matching
Diffused Emitter Ballasting
Gold Metalization System
Absbiute Maximum Ratings at 25°C
Parameter Symbol Rating
Collector-EmitterVoltage V
1 Collector-Emitter Voltage 1 V,,, 1 65 ) V )
Emitter-Base Voltage
Collector Current
Power Dissipation
JunctionTemperature
StorageTemperature
Thermal Resistance
V
P,
I
1 T,
T
e
CEO
EBO
‘c
Y
ST0
.lc
3.0
5.5
100
I
200
-65 to +200
1.3
20
Units
V
V
A
w
1
) “C
“C
“CNV
UVLESS C-HE?WISE NOTED, TOLERANCfS ARE
PHI 920-45
.050’.002
:1.52* 05)
INC-iES i.005’
:MILLIM:TZRS Z.!3t4M>
-! I
Electrical Characteristics at 25°C
Parameter
Power Gain
CollectorEfficiency
Input Return Loss RL
Load Mismatch Tolerance
Symbol
GP
%
VSWR-T - 3:l -
Broadband Test Fixture Impedances
F(MHz)
1960
1930
1990
2.7 - j5.4
ZFoa
2.8
- j5.5
2.6 - j5.3
5.0 - jl.3
4.8-11.1
5.2 - jl.5
Min Max Units
8 - dB V,,=25 V. I,,=200 mA, P&:45 W, F=l930,1990 MHz
40 - % V,,=25 V, I,,=200 mA, PO*45 W, F-l 930,199O MHz
V,,=25 V, I,,=200 mA, PO,,=45 W, F=1930,1990 MHz
10 -
zoFty)
dB
V,,=25 V, I,,=200 mA, Pou?=45 W, F=l930,1990 MHz
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Test Conditions
-
-
Wireless Bipolar Power Transistor, 33W
PH1920-45
Vl .oo
RF Test Fixture
CARBON RESISTOR
5.1 w 0.25 w. \
INDUCfOWRESI5TOft
12 TURNS r-s *m 77
.Y, NI 3
PC BOARDS
ROGERS 6010.5
0.025” Er-10.5
2 PLACES
HEATSINK.
ALWNW
73050255-02
BANANA JACK5
3 PLACES
\r r-r-++
l&l-J-
-
I
DIODE 35417AKK
POLARITY BAND
AT BO-f’TM
I
J
\ I I
UALLORY
TTSBWSBA
GROUND SHIM
2 PLACES
CHIP CAPACITOR,
4.7uF 35 V.
SNA CONNECTOR,
2052-5636-02
CHIP CAPACITORS,
33pF ATClBBA
4 PLACES
CARRIER
BRASS
73058257-12
Test Fixture PC Board Dimensions
- 0.970”
L-
TRANSISTOR
CARRIER,
COPPER
73056256-02
0.683”
CLMP,
NORYL
74250125-03
2.0w
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