an AMP company
Wireless Bipolar Power Transistor, 33W
1930 - 1990 MHz PHI 920-33
v2.01
Features
NPN Silicon Microwave Power Transistor
Common Emitter Class AB Operation
Internal Input and Output Impedance Matching
Diffused Emitter Ballasting
Gold Metallization System
Absolute’fiaximum Ratings at 25°C
Parameter 1 Symbol 1 Rating Units
Collector-EmitterVoltage
Collector-Emitter Voltage
Emitter-Base Voltage
CollectorCurrent
Power Dissipation
StorageTemperature
JunctionTemperature
Thermal Resistance
V
V
V
T
PO
s-r0
TJ
e
CEO
ES
ES0
L
JC
25
65
3.0
4.7
91
-55 to +150
200 “C
1.6
V
V
V
A
w
“C
“CIW
225 (5.72)a.015 (0.38)
,181 (4.60)+.010 (0.25)
II , .4~~r?:-ll(o.03~
I I 1 II
t
.087 (2.21)*.010 (0.25)
UNLESS OTHERWISE NOTED, TOLERANCES ARE
INCHES r.OOS (MILLIMETERS dI.13MM)
BASE
220 I--
(5.59)
I
Electrical Characteristics at 25°C
Parameter
Power Gain
Collector Efficiency
Input Return Loss RL 10 - dB V,,=25 V, l,g200 mA, PO,=33 W, F=l930,1990 MHz
Load Mismatch Tolerance
Symbol Min
GP
7\c
VSWR-T - 2:l -
Max Units TestConditions
7.0 - dB V&f5 V, I,,=200 mA, PO,,=33 W, F=l930,1990 MHz
40 - %
V,,=25 V, I,,=200 mA, PO,,=33 W, F=1930,1990 MHz
V,,=25 V. I,,=200 mA, PO,=33 W, F=lQ30,1990 MHz
Broadband Test Fixture Impedances
F(GHz)
.1930
1960
1990
z&-4 z,,(n)
2.6 - j2.6
2.5 - j2.5
2.4 - j2.3
3.3
3.8
4.1
- jl .l
- jl .O
- jO.8
Wireless Bipolar Power Transistor, 33W
PH1920-33
v2.01
RF Test Fixture
PC BOARDS
ROGERS 6010.5
,025"
2 PLACES .
DIODE
lN4245
POLARITY BAND
- ELECTROLYTIC
CAPACITOR,
50 UF 50 V
MALLORY
TTSBMSBA
SUP CONNECTOR.
WA-COM
2052-5636-02
2 PLACES
CARRIER
BRASS
73050257-12
Test Fixture PC Board Dimensions
-I
L
TRANSISTOR
CARRIER,
COPPER
73050256-01
CLAMP,
NORrL
73050258-S
.762" d
: 1.265"
w
- 1.030"
I=
I
,962"