M A COM PH1819-4N Datasheet

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Wireless Bipolar Power Transistor, 4W
1.78 - 1.90 GHz
Features
NPN Silicon Microwave Power Transistor Designed for Linear Amplifier Applications Class AB: -34 dBc Typ 3rd IMD at 4 Watts PEP Class A: +44 dBm Typ 3rd Order Intercept Point Common Emitter Configuration Internal Input Impedance Matching Diffused Emitter Ballasting Gold Metallization System
Absolute Maximum Ratings at 25°C
Parameter
Collector-Base Voltage Collector-EmitterVoltage V Emitter-Base Voltage V Collector Current Power Dissipation
JunctionTemperature Storage Temperature
Thermal Resistance
Symbol
V
cm
CES
ES0
‘c PO TJ
T
ST0
e
JC
Rating Units
60
60
3.0
0.7
19.5 200
-55 to +150
7.5 “C/W
A
W “C “C
PH1819-4N
v2.00
,975
.‘24 77,
.
V V V
1
_ ,253~.DlO , c&43*.25)
I;;;;:;;) 1 ; ;
+’ I
UN-ESS OTHERWlSE ND-ED, TOLERANZES ARE
J
1 I
,
INCt-3 t COY
:M1, L,HETERS =,13MM)
i .
.0045? OOl:,
--A-; ,110
:2.79>
t
Electrical Characteristics at 25°C
Parameter
Collector-Emitter Breakdown Voltage Collector-Emitter Leakage Current Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage
DC Forward Current Gain Power Gain Collector Efficiency Input Return Loss
Load MismatchTolerance 3rd Order IMD
Symbol Min Max Units
BV,,, 60 -
I
CES
BVcEo 20 ­BV,,, 3.0 - V 1,=2.5 mA
h
FE
GP
%
RL 10 - dB
VSWR-T - 1O:l -
IMD, -
Typical Optimum Device Impedances
F(MHz)
I
I 1780
1850 1900
I
q(Q)
3.5+i9.3
3.1 +
j9.2
3.3 +
jS.9
I
LAO(Q)
3.5+j5.6 (
4.5 + j5.2
4.8 + j5.5
2.0 mA
15 120 -
10 - dB
25 - %
dBc
-30
Test Conditions
V I,=5 mA
V,,=24 V
I,=5 mA
V
V,,=5 V, I,=O.l A V,:=26 V, I,,-,=20 mA, PO,,.=4 W PEP, F=1850 MHz, AF=lOO kHz V&6 V, l,c=20 mA, Po,,r=4 W PEP, F=1850 MHz, AF=lOO kHz V,,t26 V, I,,=20 mA, Poe4 W PEP, Ft1850 MHz, AF=lOO kHz V,,=26 V, l,c=20 mA, POUT=4 W PEP, F=1850 MHz, AF=l 00 kHz V,,=26 V, I,,=20 mA, PO,=4 W PEP, F=1850 MHz, AF=~ 00 kHz
Wireless Bipolar Power Transistor, 4W
RF Test Fixture
PH1819-4N
v2.00
"CC GD
Q ?
OUTPUT
50 OHMS
ARTWORK DIMENSIONS IN MILS
t=tQR-i-S
Cl c2 c3 c4 c5
CR1 Ll Rl RLl Ql
BOARD TYPE:
i-IS-!-
33 pF ATC SIZE A 5000 pF CHIP 50 UF 50 VOLTS lN4245 DIODE 5 TURNS OF NO, 20 AWG ON ,160” DIA 407 OHMS l/4 WATT 7 TURNS CIF Nil, 24 AWG ON 3 OHM l/4 WATT PH1819-4N ROGERS 6010,S ,025” THICK, ER = 10.5
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