M A COM PH1819-33 Datasheet
an AMP comDanv
Wireless Power Transistor, 33W
1805 - 1880 MHz PHl819-33
Features
l NPN Silicon Microwave Power Transistor
l Common Emitter Class AI3 Operation
l Internal Input and Output Impedance Matching
l Diffksed Emitter Ballasting
l Gold Metallization System
Absolute’ Maximum Ratings at 25°C
Parameter
I
Collector-EmitterVoltage
Collector-EmitterVoltage
Emitter-Base Voltage
CollectorCurrent
Power Dissipation
StorageTemperature T
I Sym~l I
V
CEO
V
cE.s
V
em
I ‘c I 4.7 I * I
PO
c-Fe
) JunctionTemperature ) T, 1 200
Thermal Resistance
6
JC
Rating 1 Units 1
25 V
65
3.0
91 w
-55 to +150
3.0 “C/W
V
V
“C
I “C I
225 (5.72)*.015 (0.38)
;48/6.30) &&y&T CqO(6.35)
225(5.72)+.015 (0.38)
,181 (4.6O)zt.OlO (0.25)
t+
.087 (2.21)r.OlO (0.25)
I- .744 (18.90)-1
,
I 1 *\I
2.20 I--
(5.59)
1
/ 11 D6Ojl.52)
UNLESS OTHERWISE NOTED, TOLERANCES ARE
INCHES t.005’ (MILLIMETERS t0.13MM)
1 f
.co5 (0.13)+.001 (0.03)
I
f
v2.01
Electrical Characteristics at 25°C
Parameter
Power Gain
Collector Efficiency
Input Return Loss
r
Load Mismatch Tolerance
Symbol Min Max
GP
%
RL 10 - dB V,,=25 V, I,,=200 mA, P,,,=33 W, F=l805,1880 MHz
VSWR-T -
Broadband Test Fixture impedances
I- ~~
1805
1850
1880
1.8 - j5.5
I
1.6 - j5.1 3.9 - jl.4
l.?-j4.8
I
Units Test Conditions
7.0 - dB I’,,=25 V, I,,=200 mA, PO,,=33 W, F=1805,1880 MHz
40 -
% V,,=25 V, l,Q=200 mA, P,,,=33 W, F=l805,1880 MHz
2:l - V,,=25 V, I,,=200 mA, PO,,=33 W, F=1805,1880 MHz
4.0-j1.4
4.0 - j0.9
I
Wireless Power Transistor, 33W
PM81 9-33
v2.01
RF Test Fixture
. .
AWG ON 3 OH
.25 w
PC BOARDS
ROGERS 6810.5
.025"
2 PLACES \
HEATSINK,
ALUMINUM
73050255-14
BOPRD
CARRIER
BRASS
73050257-12
I L
M/A-COM
-0
J
DIODE
lN4245
POLARITY BAND
AT BOlTcc( 1
/ I/
?
I!
TRANSISTOR
CARRIER,
COPPER
7305025601
r CAPAC,rlOR
L TRANSISTOR
CLAJ4P,
NORYL
74250125-01
ELECTROLYIX
CAPAClTOR.
50 UF 50 V
UALLORY
Tl50M50A
5t.U CONNECTOR,
CAPACITORS,
33pF AlC100A
4 PLACES
BOARD
CARRIER
BWS
73050257-12
Test Fixture PC Board Dimensions
1.612”
.988”
1
Loading...