M A COM PH1819-2 Datasheet

an AMP company

=-r_=

Wireless Bipolar Power Transistor, 2W

1.78 - 1.90 GHz

Features

Designed for Cellular Base Station Applications
Class AB: -34 dBc Typ 3rd IMD at 2 Watts PEP
Class A: +43 dBm Typ 3rd Order Intercept Point
Common Emitter Configuration
Internal Input Impedance Matching
Diffused Emitter Ballasting

Absolute Maximum Ratings at 25°C

Parameter

( Collector-BaseVoltage 1 V,,, 1 65

)Collector-EmmerVoltage ) V,,, 1 65

Emitter-BaseVoltage
CollectorCurrent
Power Dissipation

I-

Junction Temperature
StorageTemperature

Thermal Resistance

Symbol

_-_

I

V

EBO

L

1 P, ( 13.5 1 W 1

1

TJ

T

STG

8

JC

Rating

3.0

2.0

200 “C

-55 to +150
13 “C/W

PH1819-2

Units

( v-1

I VI

V
A

“C

Electrical Characteristics at 25°C

Parameter

Collector-Emitter Breakdown Voltage
Collector-EmitterLeakage Current
Collector-Emitter Breakdown Voltage BV,Eo 22 ­Collector-Emitter Breakdown Voltage BV,., 30 - V
Emitter-Base Breakdown Voltage BV,,, 3.0 - V I,=5 mA

DC Forward Current Gain
Power Gain
Collector Efficiency
lnout Return Loss RL
Load Mismatch Tolerance

3rd Order IMD

Symbol

BV,,. 65 -

‘CES

h

FE

GP

‘IC

VSWR-T -

IMD, -

Min

Max Units

1.0 mA V,,=25 V

120 -

15

10 - dB
35 ­10 -

5:l -

-32 dBc

%

dB

V

1~5 mA

V

I,=5 mA
I,=5 mA, R,,=220 R

V,,=5 V, I,=200 mA
V,,=25 V, I,,=25 mA, Pout=2.0 W, F=1.78,1.85,1.90 GHz
V&5 V, I,,=25 mA, Po,f2.0 W, F=l.78, 1.85, 1.9OGHz
V-,=25 V. I,,=25 mA, P *,,* =2.0 W, F=l.78,1.85,1.90 GHz

7

V,,=25 V, I,,=25 mA, P,fi2.0 W, F=1.78,1.85,1.90 GHz
V,,=25 V, I,,=25 mA, P,,,=2.0 W PEP, F=1850 MHz,AF=lOO kHz

Typical Optimum Device impedances

F(GHz)

1.78

1.85

1.90 9.5 + j9.9 5.0 + j9.0

Z,,(Q)

6.6+jlO.O 6.O+j12.0

8.4+jlO.l 5.7+jll.O

ZLmP)

Test Conditions

Wireless Bipolar Power Transistor, 2W

RF Test Fixture

PH1819-2

v2.00

INPUT ;

50 OHMS

GD

“cc

0

-c5

- c4

0

3

- c2

x/4

625

I

?

150

w OUTPUT

DHMS

%O

ARTWORK DIMENSIONS IN MILS

PAR-l-S

Cl c2 c3
c4
C5

CR1
Ql
Rl
RLl

BOARD TYPE:

I-IS-I-

33 pF ATC SIZE A

5000 pF

4,7 uF 63 VOLTS
1N914B DIODE
PH1819-2
5 OHMS l/4 WATT
6T/Nll, 24 AWG IIN 3 OHM l/4 WATT
ROGERS 60105 ,025’ THICK, ER = 10,s

Specifications Subject to Change Without Notice.

9-l 80

North America:

Tel. [phone]

Fax [phone]

8 Asia/Pacific: Tel. [phone]

Fax [phone]

M/A-COM, Inc.

Europe: Tel. [phone]

B

Fax [phone]