M A COM PH1819-10 Datasheet
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Wireless Bipolar Power Transistor, 1 OW
1.78 - 1.90 GHz
Features
l Designed for Cellular Base Station Applications
l -30 dBc Typ 3rd IMD at 10 Watts PEP
l Common Emitter Configuration
l Internal Input Impedance Matching
l Diffused Emitter BaIlasting
Absolute‘lblaximum Ratings at 25°C
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PH1819-10
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Electrical Characteristics at 25°C
Parameter
Collector-Emitter Breakdown Voltage BVcE, 65 - V
Collector-Emitter Leakage Current
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Forward Current Gain
Power Gain
Collector Efficiency
input Return Loss
Load Mismatch Tolerance
3rd Order IMD
Symbol Min Max Units Test Conditions
‘ES
) 2.0 ) mA )
BV,,, 20 BV,, 30 -
BVESO
h
FE
GP
‘IC
RL
VSWR -
IMD, -
3.0 15 120 -
9.0 - dB
40 -
10 -
3.O:l -
-28
Typical Optimum Device Impedances
F(GHz)
1.78
1.85
1.90
Specifications Subject to Change Without Notice.
z,,w
Zo*o(Q)
4.5 + j7.0 2.5 + j0.2
5.0 + j7.3 2.5 + j0
6.0 + j6.1 2.6 + 0.2
Llli-ESS CTiERWiSE NOTED. TOLERANCES ARE
INCHES Z.COL
(MILLIMETEPS :.I3MM)
I,=1 0 mA
if,,=25 v
V
I,=1 0 mA
V
I,=1 0 mA. Q220R
V
IB=l 0 mA
V,,=5 V, I,=250 mA
V,,=25 V, I,,=1 00 mA, P,,flO W, F=l.78 - 1.90 GHz
V,,=25 V, I,,=100 mA, P,,=lO W, F=l.78 - 1.90 GHz
%
V,,=25 V, I,,=1 00 mA, P,,,=lO W, F=l.78 - 1.90 GHz
dB
V,,=25 V, I,,=1 00 mA, POUT=1 0 W, F=l.78 - 1.90 GHz
V,,=25 V, lcO=l 00 mA, P,,,=lO W PEP, F=l850 MHz, AF=lOO kHz
dBc
- 2 LlAD
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Wireless Bipolar Power Transistor, 1 OW
RF Test Fixture
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PH1819-10
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INPUT
50 dJHMS
100
ARTWDRK DIMENSIONS IN MILS
PAR-I-S
Cl c2 c3 c4
CS
C6
CR1
Ql
Rl
RLl
BOARD TYPE:
TPUT
OHMS
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218
L-IS-I-
33 pF ATC SIZE A
5000 pF
50 uF 50 VOLTS
lN4245 DIODE
PH1819-10
51 OHMS l/4 WATT
6T/Nll. 24 AWG ON 3 OHM l/4 WATT
ROGERS 6010,5 ,025” THICK, ER = lo85
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