M A COM PH1617-60 Datasheet
Wireless Power Transistor, 60 Watts, 1615 - 1685 MHz PH1617-60
PH1617-60
Wireless Power Transistor
60 Watts, 1615 - 1685 MHz
Features
•
NPN Silicon Microwave Power Transistor
•
Common Emitter Configuration
•
Diffused Emitte r Ballasting Resistors
•
Gold Metalization System
•
Internal Input and Output Impedance Matching
•
-28 dBc Typical IMD at 60 Watts PEP
Description
M/A-COM’s PH1617-60 is a silicon bipolar NPN transistor
intended for use as a common emi tter class AB stage in power
amplifiers that operate in the 1615 to 1685 MHz range. This
transistor features internal input and output impedance matching,
diffused emitter ballasting and gold metalization.
The PH1617-60 is packaged in a low cost, non-hermet i c cerami c
package which has very low thermal impedance.
Absolute Maximum Rating at 25°C
Parameter Symbol Rating Units
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Collector Current I
Power Dissipation P
Storage Temperature T
Junction Temperature T
Thermal Resistance
CEO
CES
EBO
θ
C
D
stg
J
jc
20 V
65 V
3.0 V
5.8 A
150 W
-50 to +150 °C
200 °C
1.0 °C/W
Outline Drawing
Notes: (unless otherwise specified)
1. Tolerances are: inches ± 0.005” (millimeters ± 0.13mm)
1
Broadband Test Fixture Impedance
F (MHz)
1600 1.5 - j3.6 2.9 - j1.7
1650 1.4 - j3.1 2.9 - j1.1
1700 1.5 - j2.9 3.0 - j0.5
Ω
(
Z
)Z
IF
(Ω)
OF
Electrical Specifications at 25°C
Symbol Parameter Test Conditions Min Max Units
h
FE
G
η
R
DC Forward Current Gain V
Power Gain V
P
Collector Efficiency V
c
Input Return Loss V
L
VSWR-T Load Mismatch Tolerance V
M/A-COM Division of AMP Incorporated 3 North America: Tel. (800) 366-2266, Fax (800) 618-8883 3 Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
3
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
= 5.0 V, IC = 2 A 15 120 -
CE
= 26 V, I
CC
= 26 V, I
CC
= 26 V, I
CC
= 26 V, I
CC
= 260 mA, P
CQ
= 260 mA, P
CQ
= 260 mA, P
CQ
= 260 mA, P
CQ
= 60 W, f = 1615, 1685 MHz 9.0 - dB
OUT
= 60 W, f = 1615, 1685 MHz 40 - %
OUT
= 60 W, f = 1615, 1685 MHz 10 - dB
OUT
= 60 W, f = 1615, 1685 MHz - 2:1 -
OUT
V2.00
Wireless Power Transistor, 60 Watts, 1615 - 1685 MHz PH1617-60
Assembly View Circuit Dimensions
Schematic Typical Performance Curve
Typical Broadband Performance
Gain 1685 MHz
9.5
9.0
8.5
8.0
Eff. 1615 MHz
12.0
11.5
11.0
10.5
10.0
Gain (dB)
0 10203040506070
Po u t (Wa tts )
Gain 1615 MHz
70
50
Eff. 1685 MHz
30
Collector Efficiency (%)
Gain 1615MHz
Gain 1685MHz
Efficiency 1615MHz
Efficiency 1685MHz
M/A-COM Division of AMP Incorporated 3 North America: Tel. (800) 366-2266, Fax (800) 618-8883 3 Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
3
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
V2.00
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