M A COM PH1617-2 Datasheet
Wireless Bipolar Power Transistor, 2W
1.6 - 1.7 GHz PH1617-2
Features
l Designed for Linear Amplifier Applications
l Class AB: -33 dBc Typ 3rd IMD at 2 Watts PEP
l Class A: +44 dBm Typ 3rd Order Intercept Point
l Common Emitter Configuration
l Internal Input Impedance Matching
l Diffused Emitter Ballasting
Absolute Maximum Ratings at 25°C
Parameter
Collector-Base Voltage
Collector-EmitterVoltage
Emitter-Base Voltage V
Collector Current
Power Dissipation
Junction Temperature
1 StorageTemperature
Thermal Resistance 6
( Symbol ( Rating
V
CBO
V
ES
EBO
‘c
PO
T,
I TSTG
JC
6.5
65
3.0
2.0
13.5
200
1 -55to+150 1 “C 1
13
Electrical Characteristics at 25°C
Parameter
Collector-Emitter Breakdown Voltage BV,-, 65 - V
Collector-Emitter Leakage Current
Collector-EmitterBreakdownVoltage ( BV,,, ( 22 ( - 1 V 1
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Forward Current Gain
Power Gain
Collector Efficiency
Input Return Loss
Load Mismatch Tolerance
3rd Order IMD
Symbol
‘ES
BV,,, 30 -
BVEBO
h
FE
GP
“rlC
RL
VSWR-T -
IMD, - -32 dBc
Units
V
V
V
I
A
W
“C
“CNV
UNLESS DTHERvIsE NOTED, TDLER*NCES ARE
Min Max Units Test Conditions
I,=5 mA
1.0 mA V,,=25 V
I,=5 mA
V
I,=5 mA, R,,=220Q
/
3.0 -
V
I,=5 mA
15 120 - V,,& V, I,=200 mA
10 - dB
35 10 - dB
I
5:l - V,,=25 V, I,,=25 mA, P,,e2.0 W, F=l.60,1.65, 1.70 GHr
V,,=25 V, lo=25 mA, Po,,=2.0 W, F=l.60,1.65.1.70 GHz
V,,=25 V, I,,=25 mA, P,,,=2.0 W, F=l.60, 1.65. 1.70 GHz
%
V,,=25 V, I,,=25 mA, P,,=2.0 W, F=l.60.1.65,1.70 GHz
V,,=25 V, I,,=25 mA, Po,=2.0 W, PEP F=l650 MHz. AF=lOO kHz
.0601003
(1.5.?%08)
v2.00
Typical Optimum Device Impedances
Wireless Bipolar Power Transistor, 2W
RF Test Fixture
INPUT
50 OHMS
“cc
PH 1617-2
y2.00
cu OUTPUT
L
125cu50 OHMS
ARTWORK DIMENSIONS IN MILS
PAR-I-S
Cl c2 c3
c4
c5
CR1
Ql
Rl
RLl
BOARD
TYPE:
L-ISl-
33 pF ATC SIZE A
487 uF 35 “LILTS
50 UF 50 VOLTS
lN914B DIODE
PH1617-2
5R l/4 WATT
6T/NO, 24 AWG ON
ROGERS 6010,5 25
CHIP
39
MILS
1/4WATT
THICK, ER
= 10.5
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