M A COM PH1516-60 Datasheet
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Wireless Bipolar Power Transistor, 60W
1450 - 1550 MHz
Features
Designed for Linear Amplifier Applications
Class AB: -30 dBc Typ 3rd IMD at 60 Watts PEP
Class A: +53 dBm Typ 3rd Order Intercept Point
Common Emitter Configuration
Internal Input Impedance Marching
Diffused Emitter Ballasting
Absolute Maximum Ratings at 25°C
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
CollectorCurrent
Power Dissipation
JunctionTemperature
Storage Temperature
Thermal Resistance
Symbol
V
cm
V
CES
V
Em
1,
P, ( 116 W
T,
T
srt
8
JC
Rating
65
65
3.0
10
200
-55 to +150
1.5
Units
] A
“C
“C
“CIW
PHI516160
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f
V
V
V
UNLESS OTHERWISE NOTED, TOLERANCES ARE <,,,ILUnETERS r,13M,,,>
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INCHES t.005
Electrical Characteristics at 25°C
Typical Optimum Device Impedances
F(MHr)
1450
1500
1550
Z,(Q)
2.2 + j5.0
2.7+j4.5
2.1 + j3.7
Wireless Bipolar Power Transistor, 60W
RF Test Fixture
PH1516-60
INPUT
50 OHMS
vB
“cc
CR1
ARTWORK DIMENSIONS IN MILS
GD
DUTPUT
50 OHMS
Cl c2 c3 c4
C5
C6
CR1
Ll
Ql
Rl
RLl
BUARD TYPE:
18pF ATC SIZE B CAPACITOR
5OOOpF CHIP CAPACITOR
50 VOLT 5OuF ELECTROLYTIC CAPACITOR
lN5417 DIODE
7 TURNS OF Nil. 22 AWG CIN ,125' DIA
PH1516-60
4.7 OHM l/2 WATT RESISTOR
10 TURNS OF ND 26 AWG IIN 3 OHM
l/4 WATT RESISTOR
ROGERS 601Os5 ,025" THICK, ER = 10.5
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