M A COM PH1516-10 Datasheet

an AMP company

=_ F’E

Wireless Bipolar Power Transistor, 1 OW

1.45 - 1.60 GHz

Features

l Designed for Cellular Base Station Applications
l Class AB: -33 dBc Typ 3rd IMD at 10 Watts PEP
l Class A: +49 dBm Typ 3rd Order Intercept Point

l Common Emitter Configuration
l Internal Input Impedance Matching
l Diffused Emitter Ballasting

Absolute Maximum Ratings at 25°C

Electrical Characteristics at 25°C

PHl516-10

IzS

UNLESS UTHERVISE NOTED, TOLERANCES ARE <umERS t13Mn,

INCHES MO5

v2.00

DC Forward Current Gain

Power Gain
Collector Eff iciency
Input Return Loss
Load Mismatch Tolerance VSWR - 3.011 -

3rd Order IMD

h

FE

GP

%

RL

IMD, -

120 -

15

10 - dB
40 ­10 -

-30

Typical Device Impedances

F&Hz)

1.50

1.55

1.60

Specifications Subject to Change Without Notice.

9-150

North America:

Tel. [phone] m Asia/Pacific: Tel. [phone]
Fax [phone]

q.J(Q)

1.4 + j4.8

2.0 + j5.0

2.5 + j4.9

Fax [phone]

V,,=5 V, I,=1 A
V,,=25 V, I,,=100 mA, POUT=1 0 W, F=l.50 - 1.60 GHz
V,,=25 V, I,,=100 mA, P,*lO W, F=l SO - 1.60 GHz

%

V,,=25 V, I,,=1 00 mA, P,,=lO W, F=l.50 - 1.60 GHz

dB

V,,=25 V. l,glOO mA, P,,,=lO W, F=l.50 - 1.60 GHz
V,,=25 V, I,,=100 mA, P,+O W PEP F=1500 MHz, AF=lOO kHz

dBc

z LO4D

r

M/A-COM, Inc.

Europe: Tel. i-44 (1344) 869 595

n

Fax [phone]

Wireless Bipolar Power Transistor, 1 OW

RF Test Fixture

PH1516-10

v2.00

"cc GD

Q C5 Q

INPUT

50 OHMS

c3

El

512

ARTWORK DIMENSIONS IN MILS

UUTPUT

50 OHMS

M/A-COM, Inc.

North America:

Cl c2 c3
c4
C5

CR1
Ql
Rl

RLl

BOARD TYPE:

Specifications Subject to Change Wtihout Notice.

Tel. [phone]
Fax [phone]

33 pF ATC SIZE A

4,7 uF 35 VOLT CHIP
50 uF 50 VOLTS
lN4245 DIODE
PH1516-10
5 OHMS l/4 WATT
6T/NO, 24 AWG DN 3 OHM l/4 WATT
ROGERS 6010,5 ,025" THICK, ER = 1005

m Asia/Pacific: Tel. [phone]

Fax [phone]

Europe: Tel. [phone]

s

Fax [phone]

9-151