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Radar Pulsed Power Transistor, SW, loops Pulse, 10% Duty
v2.00
1.2 - 1.4 GHz
Features
NPN Silicon Microwave Power Transistor
Common Base Configuration
Broadband Class C Operation
Interdigitated Geometry
Diffused Emitter Ballasting Resistors
Gold Metalization SystemInternal Input Impedance Matching
Herrktic Metal/Ceramic Package
Absolute Maximum Ratings at 25°C
Storage Temperature
.i37z.P10
PH1214-8M
.304z.531
Electrical Characteristics at 25°C
Broadband Test Fixture Impedances