M A COM PH1214-80M Datasheet
Radar Pulsed Power Transistor 80 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty PH1214-80M
O
PH1214-80M
Radar Pulsed Power Transistor - 80 Watts,
1.20-1.40 GHz, 150µs Pulse, 10% Duty
Features
•
NPN Silicon Microwave Power Transistor
•
Common Base Configuration
•
Broadband Class C Operation
•
High Efficiency Interdigitated Geometry
•
Diffused Emitte r Ballasting Resistors
•
Gold Metalization System
•
Internal Input and Output Impedance Matching
•
Hermetic Metal/Ceramic Package
Description
M/A-COM’s PH1214-80M is a silicon bipolar NPN power
transistor designed for use in L-band, 1.2 - 1.4 GHz pulsed
radars such as air traffic control and long-range weath er radars.
Designed for common-base, class C, broadband pulsed power
applications, the PH1214-80M can produce 80 watts of output
power with medium pulse length (150 µ S) at 10 percent duty
cycle. The transistor is hous ed in a 2-lead, rectangular metalceramic flange package, with internal input and output
impedance matching networks. Dissued emitter ballast resistors
and gold metalization assure ruggedness and long-term reliability. In addition to L-band pulsed r adars, this high performance
power transistor can also be used in pulsed digital communications systems.
Absolute Maximum Rating at 25°C
Parameter Symbol Rating Units
Collector-Emitter Voltage V
Emitter-Base Voltage V
Collector Current (Peak) I
Total Power Dissipation
P
@ +25°C
Storage Temperature T
Junction Temperature T
CES
EBO
C
TOT
stg
j
70 V
3.0 V
6.4 A
185 W
-65 to +200 °C
200 °C
Outline Drawing
Notes: (unless otherwise specified)
1. Tolerances are: inches ± .005” (millimeters ± 0.13mm)
1
Broadband Test Fixture Impedance
F (GHz)
1.20 9.4 - j4.5 7.0 - j2.8
1.30 8.3 - j2.8 4.5 - j3.2
1.40 7.9 - j1.3 3.0 - j2.1
TEST FIXTURE
IN PUT
CIRCUIT
50
Ω
Z
IF
(Ω)Z
Z
IF
TEST FIXTURE
OUTPUT
CIRCUIT
Z
F
(Ω)
OF
50
Ω
Electrical Specifications at 25°C
Symbol Parameter Test Conditions Min Max Units
BV
I
CES
R
TH(JC)
P
G
η
R
VSWR-T Load Mismatch Tolerance V
VSWR-S Load Mismatch Stability V
M/A-COM Division of AMP Incorporated 3 North America: Tel. (800) 366-2266, Fax (800) 618-8883 3 Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
3
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
Collector-Emitter Breakdow n IC = 35 mA 70 - V
CES
Collector-Emitter Breakdow n V
Thermal Resistance V
Output Power V
O
Power Gain V
P
Collector Efficiency V
Input Return Loss V
L
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
= 40 V - 3.5 mA
CE
= 40 V, P
CC
= 40 V, P
CC
= 40 V, P
CC
= 40 V, P
CC
= 40 V, P
CC
= 40 V, P
CC
= 40 V, P
CC
= 13 W, f = 1.2, 1.3, 1.4 GHz - 0.80 °C/W
in
= 13 W, f = 1.2, 1.3, 1.4 GHz 80 W
in
= 13 W, f = 1.2, 1.3, 1.4 GHz 7.5 - dB
in
= 13 W, f = 1.2, 1.3, 1.4 GHz 50 -
in
= 13 W, f = 1.2, 1.3, 1.4 GHz 9 - dB
in
= 13 W, f = 1.2, 1.3, 1.4 GHz - 3:1 -
in
= 13 W, f = 1.2, 1.3, 1.4 GHz - 1.5:1 -
in
%
V2.00
Radar Pulsed Power Transistor 80 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty PH1214-80M
Test Fixture Electrical Schematic
Top View
Note:
1. Dimensions are in mils.
1
Electrical Schematic Parts List
C1, C2 100 pF ATC size A
C3 50 uF 50 Volts
Q1 PH1214-80M
Board Type Rogers 6010.5 .025” Thick, E
= 10.5
R
M/A-COM Division of AMP Incorporated 3 North America: Tel. (800) 366-2266, Fax (800) 618-8883 3 Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
3
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
V2.00
Loading...