M A COM PH1214-6M Datasheet

an AMP company

Radar Pulsed Power Transistor, SW, loops Pulse, 10% Duty

1.2 - 1.4 GHz

Features

NPN Silicon Microwave Power Transistor
Common Base Configuration
Broadband Class C Operation
Interdigitated Geometry
Diffused Emitter Ballasting Resistors

Gold Metalization System
Internal Input Impedance Matching
Hermetic‘NletalKeramic Package

Absolute Maximum Ratings at 25°C

PHI 214-6M

UNLESS C-iTRW:SE ‘ICTED. T3LE?ANCES A?E

IN’HES =.O”‘j’

I

(xI, IMETERS ; 13yy’

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Electrical Characteristics at 25°C

Parameter

Collector-Emitter Breakdown Voltage

Collector-Emitterleakage Current
Thermal Resistance
Output Power

Power Gain
Collector Efficiency
Input Return Loss

Load Mismatch Tolerance
Load Mismatch Stablility

Symbol Min Max Units Test Conditions

BV,,, 65 -

I

CES

R

W(X)

P

O”T

GP

‘lC

RL 6 - dB
VSWR-T ­VSWR-S - 1S:l - V,,=28 V, P,,=1.2 W, F=l.20,1.30,1.40 GHz

Broadband Test Fixture Impedances

F(GHz)

1.20

1.30 TBD TBD

z,,m z&-4

TBD TBD

V lc=l 2 mA

mA v,,=40 v

1.5
“C/w

5.8

6.0 - w

7.0 - dB

45 -

3:l -

%

V,,=28 V, P&.2 W, F=1.20,1.30,1.40 GHz
V,,=28 V, P,,=1.2 W, F=1.20, 1.30, 1.40GHz
V,,=28 V, P,,=1.2 W, F=l.20,1.30,1.40 GHz

Vcc=28 V, P,,=l.2 W, F=l.20,1.30,1.40 GHz

V,,=28 V, P&.2 W, F=l.20,1.30,1.40 GHz
V,,=28 V, P,,=l.2 W, F=l.20,1.30,1.40 GHz