M A COM PH1214-55EL Datasheet

an AMP comDanv

Radar Pulsed Power Transistor, SW, 1 .Oms Pulse, 10% Duty

1.2 - 1.4 GHz

Features

l NPN Silicon Microwave Power Transistor
l Common Base Configuration
l Broadband Class C Operation
l Matrix Geometry
l Diffused Emitter Ballasting Resistors
l Gold Metalization System
l Internal Input Impedance Matching

l Hermetic Metal/Ceramic Package

Absolute Maximum Ratinas at 25°C

I Parameter

1 Collector-EmitterVoltage ) V,,, 1 58

Emitter-BaseVoltage

Collector Current (Peak)
Total Power Dissipation
JunctionTemperature
StorageTemperature

1 Symbol 1 Rating 1 Units 1

I vm I 3.0 I v I

7.0

100 w

200

-65 to +200

P

T

‘c
TOT

T,

SIG

I v I

A

“C

“C

PH1214-55EL

903

(22 85)

LiNLESS UT’IERWISC NOTED. TDLER4NCES ARE (MI_LIMFirRS ~13YM)

J

INCHES 1.035’

- -

v2.00

Electrical Characteristics at 25°C

Broadband Test Fixture Impedances

F(GHz)

1.20 5.7 + jl.8 5.5 - j3.4

I

I

1.30

1.40

I

I

Z,,(Q)

2.4 + il.3

2.4 + j0.6

I

I

Z,,(Q)

3.3-i2.3 I

2.0-j2.3 1

9-136

Specifications Subject to Change Without Notice.

North America:

Tel. [phone] n Asia/Pacific: Tel. [phone]
Fax [phone]

Fax [phone]

M/A-COM, Inc.

n Europe: Tel. [phone]

Fax [phone]

Radar Pulsed Power Transistor, 40W

RF Test Fixture

p-j;;-

/

x/4

r-

540

I

c2

PH1214-40M

v2.00

“cc

0

00

II

I

INPUT

50 OHMS

OUTPUT

50 OHMS

ARTWORK DIMENSIONS IN MILS

Cl c2
c3
Ql

100 pF ATC SIZE A
47 UF 63 VOLTS
PH1214-40M

BOARD TYPE: ROGERS 6010,5 ,025" THICK, ER = 10,s

M/A-COM, Inc.

Specifications Subject to Change Without Notice.

North America: Tel. [phone]

Fax [phone]

m Asia/Pacific: Tel. [phone]

Fax [phone]

Europe: Tel. [phone]

m

Fax [phone]

9-135